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參數資料
| 型號： | IXSH45N120 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | High Voltage, Low VCE(sat) IGBT |
| 中文描述： | 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 88K |
| 代理商： | IXSH45N120 |
1 - 4
2000 IXYS All rights reserved
TO-247 AD
GCE
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
1200
1200
V
V
20
30
V
V
T
C
= 25 C, limited by leads
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 2.7
Clamped inductive load, L = 30 H
75
45
180
A
A
A
I
= 90
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 0.6 V
CES
, T
J
= 125 C
R
G
= 22
non repetitive
T
C
= 25 C
10
s
P
C
T
J
T
JM
T
stg
M
d
Weight
300
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
1.13/10
Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
High Voltage,
Low V
CE(sat)
IGBT
IXSH 45N120
V
CES
I
C25
V
CE(sat)
= 1200 V
= 75 A
= 3 V
Short Circuit SOA Capability
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 3 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
1200
V
V
4
6
8
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
400
1.2
A
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
3
V
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
G
International standard package
JEDEC TO-247
G
High frequency IGBT with guaranteed
Short Circuit SOA capability
G
Fast Fall Time for switching speeds
up to 20 kHz
G
2nd generation HDMOS
TM
process
G
Low V
- for minimum on-state conduction
losses
G
MOS Gate turn-on
- drive simplicity
Applications
G
AC motor speed control
G
DC servo and robot drive
G
Uninterruptible power supplies (UPS)
G
Switch-mode and resonant-mode
power supplies
G
Welding
Advantages
G
Easy to mount with 1 screw
(isolated mounting screw hole)
G
High power density
92773F (7/00)
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXSH45N120B | 功能描述:IGBT 晶體管 75 Amps 1200V 3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH50N60B | 功能描述:IGBT 晶體管 75 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH50N60BS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-247SMD |
| IXSK30N60BD1 | 功能描述:IGBT 晶體管 55 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSK30N60CD1 | 功能描述:IGBT 晶體管 55 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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