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參數資料
| 型號： | IXTQ23N60Q |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFETs Q-Class |
| 中文描述： | 23 A, 600 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, TO-3P, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 540K |
| 代理商： | IXTQ23N60Q |
2003 IXYS All rights reserved
Symbol
Test Conditions
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Maximum Ratings
V
DSS
V
DGR
600
600
V
V
V
GS
V
GSM
I
D25
I
DM
I
AR
Continuous
Transient
±
30
±
40
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
23
A
92
A
23
A
E
AR
E
AS
30
mJ
1.5
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
5
V/ns
P
D
T
J
T
JM
T
stg
400
W
°
C
°
C
°
C
-55 ... +150
150
-55 ... +150
T
L
M
d
Weight
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Mounting torque
1.13/10 Nm/lb.in.
6
g
G = Gate
S = Source
D = Drain
TAB = Drain
DS99080(08/03)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2.5
4.5
V
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
25
μ
A
mA
1
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
0.32
Power MOSFETs
Q-Class
Features
z
IXYS advanced low gate charge
process
z
International standard package
z
Low gate charge and capacitance
- easier to drive
- faster switching
z
Low R
DS (on)
z
Unclamped Inductive Switching (UIS)
rated
z
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
z
Easy to mount
z
Space savings
z
High power density
IXTQ 23N60Q
V
DSS
I
D25
R
DS(on)
=
=
=
600 V
23 A
0.32
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt,
Low Gate Charge and Capacitances
Preliminary Data Sheet
TO-3P (IXTQ)
G
DS
(TAB)
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