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參數資料
| 型號： | J110 |
| 廠商： | InterFET Corporation |
| 英文描述： | N-Channel Silicon Junction Field-Effect Transistor |
| 中文描述： | N溝道硅結場效應晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 47K |
| 代理商： | J110 |
J
J108
J109
J110
N-Channel Switch
This device is designed for analog or digital switching applications where
very low on resistance is mandatory. Sourced from Process 58.
GSD
TO-92
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
J108 / J109 / J110
350
2.8
125
357
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
Symbol
Parameter
Value
Units
V
DG
V
GS
I
GF
T
J
, T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
- 25
10
V
V
mA
°
C
-55 to +150
Discrete POWE R & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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相關代理商/技術參數 |
參數描述 |
|---|---|
| J110 WAF | 制造商:ON Semiconductor 功能描述: |
| J110,126 | 功能描述:射頻JFET晶體管 N-Channel Single ’+/- 25V 80mA RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| J110 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET N TO-92 |
| J110 | 制造商:Fairchild Semiconductor Corporation 功能描述:Leaded Process Compatible:Yes |
| J110/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:JFET - General Purpose |
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