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參數資料
| 型號： | JANSF2N7382 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 121K |
| 代理商： | JANSF2N7382 |
Product Summary
Part Number
IRHY9130CM
IRHY93130CM
BV
DSS
-100V
-100V
R
DS(on)
0.30
0.30
I
D
-11A
-11A
Features:
n
Radiation Hardened up to 3 x 10
6
Rads (Si)
n
Single Event Burnout (SEB) Hardened
n
Single Event Gate Rupture (SEGR) Hardened
n
Gamma Dot (Flash X-Ray) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Electrically Isolated
n
Ceramic Eyelets
Absolute Maximum Ratings
Parameter
Continuous Drain Current
IRHY9130CM, IRHY93130CM Units
-11
-7.0
-44
75
0.6
±20
150
-11
7.5
-16
-55 to 150
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
7.0(typical)
g
Pre-Radiation
-100Volt, 0.30
, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technol-
ogy HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under
identical
pre- and post-radiation
test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain
identical
electrical specifications
up to 3 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the P-Channel
RAD HARD process utilizes International Rectifier’s pat-
ented HEXFET technology, the user can expect the high-
est quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also fea-
ture all of the well-established advantages of MOSFETs,
such as voltage control, very fast switching, ease of
paralleling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers and high-energy pulse cir-
cuits in space and weapons environments.
o
C
A
Preliminary Data Sheet No. PD-9.1400A
IRHY9130CM
IRHY93130CM
REPETITIVE AVALANCHE AND dv/dt RATED
JANSR2N7382
JANSF2N7382
[REF: MIL-PRF-19500/615]
HEXFET
TRANSISTOR
P-CHANNEL
RAD HARD
10/21/97
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