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參數(shù)資料
| 型號(hào)： | JANSF2N7492T2 |
| 廠商： | International Rectifier |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 146K |
| 代理商： | JANSF2N7492T2 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
12
*
9.5
48
25
0.2
±20
270
12
2.5
9.6
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
o
C
A
www.irf.com
1
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
RADIATION HARDENED JANSR2N7492T2
POWER MOSFET 60V, N-CHANNEL
THRU-HOLE (TO-39)
REF: MIL-PRF-19500/701
IRHF57034
TECHNOLOGY
TO-39
Product Summary
Part Number Radiation Level R
DS(on)
IRHF57034 100K Rads (Si) 0.048
12A* JANSR2N7492T2
IRHF53034 300K Rads (Si) 0.048
IRHF54034 500K Rads (Si) 0.048
IRHF58034 1000K Rads (Si) 0.060
I
D
QPL Part Number
12A*
12A*
12A*
JANSF2N7492T2
JANSG2N7492T2
JANSH2N7492T2
PD - 93791D
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| JANSG2N7492T2 | 30V N-Channel PowerTrench MOSFET |
| JANSH2N7492T2 | 30V N-Channel PowerTrench MOSFET |
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| JANSF2N7494U5 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| JANSG2N7494U5 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
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| JANSF2N7494U5 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
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