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參數(shù)資料
| 型號(hào)： | JANSG2N7270 |
| 英文描述： | 500V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
| 中文描述： | 500V 600kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 254AA封裝 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 311K |
| 代理商： | JANSG2N7270 |
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRHM7450
500V
0.45
11A
IRHM8450
500V
0.45
11A
Features:
n Radiation Hardened up to 1 x 106 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
Absolute Maximum Ratings
Parameter
IRHM7450, IRHM8450
Units
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
11
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
7.0
IDM
Pulsed Drain Current
44
PD @ TC = 25°C
Max. Power Dissipation
150
W
Linear Derating Factor
1.2
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
500
mJ
IAR
Avalanche Current
11
A
EAR
Repetitive Avalanche Energy
15
mJ
dv/dt
Peak Diode Recovery dv/dt
3.5
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
9.3 (typical)
g
PD - 90673A
Pre-Irradiation
500Volt, 0.45
, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x106 Rads(Si). Under
identical pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD HARD HEXFETs retain
identical electrical specifications up to 1 x 105 Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 1012 Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
oC
A
REPETITIVE AVALANCHE AND dv/dt RATED
JANSR2N7270
HEXFET TRANSISTOR
JANSH2N7270
www.irf.com
1
02/01/99
N CHANNEL
MEGA RAD HARD
IRHM7450
IRHM8450
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PDF描述 |
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| JANSH2N7270 | 500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package |
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| JANSR2N7431U | 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package |
| JANSF2N7380 | 100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package |
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