- 您現在的位置：買賣IC網 > PDF目錄384552 > JANSG2N7491T2 (International Rectifier) 30V N-Channel PowerTrench MOSFET PDF資料下載
參數資料
| 型號： | JANSG2N7491T2 |
| 廠商： | International Rectifier |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 147K |
| 代理商： | JANSG2N7491T2 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
12
*
10
48
25
0.2
±20
520
12
2.5
3.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
o
C
A
www.irf.com
1
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Identical Pre and Post Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
TO-39
RADIATION HARDENED JANSR2N7491T2
POWER MOSFET 30V, N-CHANNEL
THRU-HOLE (TO-39)
REF: MIL-PRF-19500/701
TECHNOLOGY
IRHF57Z30
Product Summary
Part Number Radiation Level R
DS(on)
IRHF57Z30 100K Rads (Si) 0.045
12A* JANSR2N7491T2
IRHF53Z30 300K Rads (Si) 0.045
IRHF54Z30 500K Rads (Si) 0.045
IRHF58Z30 1000K Rads (Si) 0.056
I
D
QPL Part Number
12A*
12A*
12A*
JANSF2N7491T2
JANSG2N7491T2
JANSH2N7491T2
PD - 93793E
相關PDF資料 |
PDF描述 |
|---|---|
| JANSH2N7491T2 | 30V N-Channel PowerTrench MOSFET |
| JANSR2N7491T2 | 30V N-Channel PowerTrench MOSFET |
| JANSF2N7492T2 | 30V N-Channel PowerTrench MOSFET |
| JANSG2N7492T2 | 30V N-Channel PowerTrench MOSFET |
| JANSH2N7492T2 | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| JANSG2N7492T2 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSG2N7493T2 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSG2N7494U5 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSG2N7495U5 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSG2N7498T2 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
發布緊急采購，3分鐘左右您將得到回復。