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參數資料
| 型號： | JANSH2N7482T3 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（對257AA） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 143K |
| 代理商： | JANSH2N7482T3 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
18*
18*
72
75
0.6
±20
177
18
7.5
1.7
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063in./1.6mm from case for 10 sec)
4.3 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
o
C
A
www.irf.com
1
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
TO-257AA
RADIATION HARDENED JANSR2N7482T3
POWER MOSFET 30V, N-CHANNEL
THRU-HOLE (TO-257AA)
REF: MIL-PRF-19500/702
TECHNOLOGY
IRHY57Z30CM
Product Summary
Part Number Radiation Level R
DS(on)
IRHY57Z30CM 100K Rads (Si) 0.03
18A* JANSR2N7482T3
IRHY53Z30CM 300K Rads (Si) 0.03
IRHY54Z30CM 500K Rads (Si) 0.03
IRHF58Z30CM 1000K Rads (Si) 0.035
18A* JANSH2N7482T3
I
D
QPL Part Number
18A* JANSF2N7482T3
18A* JANSG2N7482T3
PD-93824E
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