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參數(shù)資料
| 型號： | JANSR2N7424 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 118K |
| 代理商： | JANSR2N7424 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
IRHM9064/IRHM93064
-35
-30
-192
250
2.0
±20
500
-35
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
25
-5.5
-55 to 150
300 ( for 5 Sec.)
9.3 (typical)
g
Pre-Irradiation
o
C
A
7/6/98
www.irf.com
1
P-CHANNEL
RAD HARD
PD - 91438A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
IRHM9064
IRHM 93064
JANSR2N7424
-60 Volt, 0.05
, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 3 X 10
5
Rads (Si). Under
identical
pre- and post-
radiation test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in gate drive
circuitry is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 10
12
Rads (Si)/
Sec, and return to normal operation within a few microsec-
onds. Single Event Effect (SEE) testing of International Recti-
fier P-Channel RAD HARD HEXFETs has demonstrated
immunity to SEE failure. Since the P-Channel RAD HARD
process utilizes International Rectifier’s patented HEXFET tech-
nology, the user can expect the highest quality and reliability in
the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters. They are
well-suited for applications such as switching power supplies,
motor controls, inverters, choppers, audio amplifiers and high-
energy pulse circuits in space and weapons environments.
Product Summary
Part Number
IRHM9064
IRHM93064
BV
DSS
-60V
-60V
R
DS(on)
0.0
5
0.0
5
I
D
-35A
-35A
Features:
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANSR2N7426U | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| JANSF2N7426U | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| JANSR2N7440 | Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| JANSR2N7403 | 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET |
| JANSR2N7404 | 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANSR2N7424U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSR2N7425 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 35A 3PIN TO-254AA - Rail/Tube |
| JANSR2N7425/SLDC | 制造商:International Rectifier 功能描述:SPACE PART SINGLE LOT DATECODE CHARGE - Virtual or Non-Physical Inventory (Software & Literature) |
| JANSR2N7425U | 制造商:International Rectifier 功能描述:JANSR2N7425U - Bulk |
| JANSR2N7426 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 200V 27A 3PIN TO-254AA - Rail/Tube |
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