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參數資料
| 型號： | JANSR2N7472U2 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統（SMD - 2） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 191K |
| 代理商： | JANSR2N7472U2 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID@ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
75*
57
300
250
2.0
±20
280
75
25
5.5
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5s)
3.3 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
o
C
A
www.irf.com
1
SMD-2
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
RADIATION HARDENED JANSR2N7472U2
POWER MOSFET 130V, N-CHANNEL
SURFACE MOUNT(SMD-2)
REF: MIL-PRF-19500/684
IRHNA57163SE
Product Summary
Part Number Radiation Level R
DS(on)
I
D
QPL Part Number
IRHNA57163SE 100K Rads (Si) 0.0135
75A* JANSR2N7472U2
TECHNOLOGY
PD-93856D
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PDF描述 |
|---|---|
| JANSR2N7473U2 | RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2) |
| JANSR2N7474U2 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| JANSR2N7475T1 | RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) |
| JANSR2N7480U3 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| JANSR2N7473U2 | 制造商:International Rectifier 功能描述:TRANSISTOR, MOSFET, N-CHANNEL, 200V, 55 - Rail/Tube |
| JANSR2N7474U2 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSR2N7475T1 | 制造商:International Rectifier 功能描述:45A 130V NCHANNEL RAD HARD POWER MOSFEDCT MIL FPR 19500/685 - Rail/Tube |
| JANSR2N7475T1/DATAPACK | 制造商:International Rectifier 功能描述:SPACE PART DATA - Virtual or Non-Physical Inventory (Software & Literature) |
| JANSR2N7475T1/SLDC | 制造商:International Rectifier 功能描述:SPACE PART SINGLE LOT DATECODE CHARGE - Virtual or Non-Physical Inventory (Software & Literature) |
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