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參數資料
| 型號： | JANSR2N7498T2 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) |
| 中文描述： | 抗輻射功率MOSFET的通孔（到39） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 137K |
| 代理商： | JANSR2N7498T2 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
7.0
4.5
28
25
0.2
±20
130
7.0
2.5
4.2
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED JANSR2N7498T2
POWER MOSFET 200V, N CHANNEL
THRU-HOLE ( TO-39) REF:MIL-PRF-19500/706
09/10/03
www.irf.com
1
TECHNOLOGY
TO-39
For footnotes refer to the last page
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Product Summary
Part Number Radiation Level R
DS(on)
I
D
QPL Part Number
IRHF57230SE 100K Rads (Si) 0.24
7.0A JANSR2N7498T2
IRHF57230SE
PD - 93857B
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