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參數(shù)資料
| 型號： | JANTX2N2944A |
| 英文描述： | TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 100MA I(C) | TO-46 |
| 中文描述： | 晶體管|晶體管|進步黨| 10V的五（巴西）總裁| 100mA的一（c）|的TO - 46 |
| 文件頁數(shù)： | 1/21頁 |
| 文件大小： | 137K |
| 代理商： | JANTX2N2944A |
MIL-PRF-19500/368F
8 July 2002
SUPERSEDING
MIL-PRF-19500/368E
24 August 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L AND 2N3440UA,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage
transistors. Four levels of product assurance are provided for each encapsulated device types as specified in
MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
* 1.2 Physical dimensions. See figure 1 (similar to TO-5 and TO-39), figure 2 (JANHCA and JANKCA (A versions)),
figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions).
* 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Types
P
T (1)
T
A
= +25
°C
P
T (2)
T
C
= +25
°C
V
CBO
V
EBO
V
CEO
I
C
T
STG
and T
OP
RθJA
2N3439, 2N3439L,
2N3439UA
W
0.8
W
5.0
V dc
450
V dc
7
V dc
350
A dc
1.0
°C
-65 to +200
°C/W
325
2N3440, 2N3440L
2N3440UA
0.8
5.0
300
7
250
1.0
-65 to +200
325
(1) Derate linearly 5.7 mW/
°C for T
A > +60°C.
(2) Derate linearly 28.6 mW/
°C for T
C > +25°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 8 October 2002.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,
P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTX2N2945 | 制造商: 功能描述: 制造商:Honeywell Sensing and Control 功能描述: 制造商:undefined 功能描述: |
| JANTX2N2945A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 20V 0.1A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 20V 0.1A 3PIN TO-46 - Bulk 制造商:Microsemi Corporation 功能描述:TRANS PNP 20V 100MA 400MW TO-46 制造商:Microsemi 功能描述:Trans GP BJT PNP 20V 0.1A 3-Pin TO-46 |
| JANTX2N2946A | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk 制造商:Microsemi 功能描述:Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 |
| JANTX2N3019 | 功能描述:兩極晶體管 - BJT JANTX2N3019 RoHS:否 制造商:ON Semiconductor 配置:Single 晶體管極性:NPN 集電極—基極電壓 VCBO:140 VDC 集電極—發(fā)射極最大電壓 VCEO:80 VDC 發(fā)射極 - 基極電壓 VEBO:7 VDC 集電極—射極飽和電壓:0.2 V 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:15 mA 最大工作溫度:+ 200 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-5 |
| JANTX2N3019S | 功能描述:兩極晶體管 - BJT JANTX2N3019S RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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