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參數(shù)資料
| 型號： | JANTX2N6756 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率MOS場效應(yīng)管) |
| 中文描述： | HEXFET功率MOSFET（馬鞍山的HEXFET功率場效應(yīng)管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 127K |
| 代理商： | JANTX2N6756 |
Product Summary
Part Number
JANTX2N6756
JANTXV2N6756
BV
DSS
R
DS(on)
I
D
Features:
I
Avalanche Energy Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
N-CHANNEL
Provisional Data Sheet No. PD-9.333E
100 Volt, 0.18
HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
JANTX2N6756
JANTXV2N6756
[REF:MIL-PRF-19500/542]
[GENERIC:IRF130]
HEXFET
POWER MOSFET
Absolute Maximum Ratings
Parameter
Continuous Drain Current
JANTX2N6756, JANTXV2N6756
Units
14
9
56
75
0.60
±20
75
14
7.5
5.5
-55 to 150
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
11.5 (typical)
Weight
g
o
C
A
14A
0.18
100V
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