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參數資料
| 型號： | JANTXV2N6760 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率MOS場效應管) |
| 中文描述： | HEXFET功率MOSFET（馬鞍山的HEXFET功率場效應管） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 124K |
| 代理商： | JANTXV2N6760 |
Product Summary
Part Number
JANTX2N6760
JANTXV2N6760
BV
DSS
R
DS(on)
I
D
Features:
I
Avalanche Energy Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
N-CHANNEL
Provisional Data Sheet No. PD-9.335E
400 Volt, 1.00
HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry achieves very low on-state resistance
combined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits, and virtually any application where high
reliability is required.
JANTX2N6760
JANTXV2N6760
[REF:MIL-PRF-19500/542]
[GENERIC:IRF330]
HEXFET
POWER MOSFET
Absolute Maximum Ratings
Parameter
Continuous Drain Current
JANTX2N6760, JANTXV2N6760
Units
5.5
3.5
22
75
0.60
±20
1.7
5.5
—
4.0
-55 to 150
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
11.5 (typical)
Weight
g
o
C
A
5.5A
1.00
400V
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相關代理商/技術參數 |
參數描述 |
|---|---|
| JANTXV2N6762 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-3 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 4.5A 2PIN TO-3 - Bulk |
| JANTXV2N6764 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-204AE 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 38A 3PIN TO-204AE - Bulk |
| JANTXV2N6764T1 | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH |
| JANTXV2N6766 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AA 制造商:International Rectifier 功能描述:100V THRU 500V, UP TO 38A, N-CH, ENHANCEMENT MODE MOSFET PWR - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET (NFET) - Bulk 制造商:International Rectifier 功能描述:to-3 200V, 35A, 0.085 ohm |
| JANTXV2N6766T1 | 制造商:Microsemi Corporation 功能描述:2N6766T1JANTXV - Bulk |
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