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參數(shù)資料
| 型號(hào)： | JANTXV2N6764 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | HEXFET功率MOSFET（馬鞍山的HEXFET功率場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 129K |
| 代理商： | JANTXV2N6764 |
Product Summary
Part Number
JANTX2N6764
JANTXV2N6764
BV
DSS
R
DS(on)
I
D
Features:
I
Avalanche Energy Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
N-CHANNEL
100 Volt, 0.055
HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry achieves very low on-state resistance
combined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor
controls, inverters, choppers, audio amplifiers, and high
energy pulse circuits, and virtually any application where
high reliability is required.
JANTX2N6764
JANTXV2N6764
[REF:MIL-PRF-19500/543]
[GENERIC:IRF150]
HEXFET
POWER MOSFET
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
JANTX2N6764, JANTXV2N6764 Units
38
24
152
150
1.2
±20
150
38
15
5.5
-55 to 150
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (0.063 in. (1.6mm) from
case for 10 seconds)
11.5 (typical)
Weight
g
o
C
A
38A
0.055
100V
Provisional Data Sheet No. PD-9.337E
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| JANTX2N6764 | HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管) |
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| JANTXV2N6768 | HEXFET Power MOSFET(HEXFET 功率MOS場(chǎng)效應(yīng)管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV2N6764T1 | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH |
| JANTXV2N6766 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AA 制造商:International Rectifier 功能描述:100V THRU 500V, UP TO 38A, N-CH, ENHANCEMENT MODE MOSFET PWR - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET (NFET) - Bulk 制造商:International Rectifier 功能描述:to-3 200V, 35A, 0.085 ohm |
| JANTXV2N6766T1 | 制造商:Microsemi Corporation 功能描述:2N6766T1JANTXV - Bulk |
| JANTXV2N6768 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3 制造商:International Rectifier 功能描述:100V THRU 500V, UP TO 38A, N-CH, ENHANCEMENT MODE MOSFET PWR - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET, TO-204AA, LAW - Bulk |
| JANTXV2N6768T1 | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 400V 14A 3-Pin(3+Tab) TO-254 T/R 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
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