- 您現在的位置：買賣IC網 > PDF目錄384559 > JANTX2N6762 (International Rectifier) HEXFET Power MOSFET(HEXFET 功率MOS場效應管) PDF資料下載
參數資料
| 型號： | JANTX2N6762 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率MOS場效應管) |
| 中文描述： | HEXFET功率MOSFET（馬鞍山的HEXFET功率場效應管） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 124K |
| 代理商： | JANTX2N6762 |
Product Summary
Part Number
JANTX2N6768
JANTXV2N6768
BV
DSS
R
DS(on)
I
D
Features:
I
Avalanche Energy Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
N-CHANNEL
Provisional Data Sheet No. PD-9.336E
500 Volt, 1.5
HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry achieves very low on-state resistance
combined with high transconductance.
HEXFET transistors also feature all of the well-estab-
lish advantages of MOSFETs, such as voltage control,
very fast switching, ease of paralleling and electrical
parameter temperature stability. They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, and
high energy pulse circuits, and virtually any application
where high reliability is required.
JANTX2N6762
JANTXV2N6762
[REF:MIL-PRF-19500/542]
[GENERIC:IRF430]
HEXFET
POWER MOSFET
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
JANTX2N6762, JANTXV2N6762
Units
4.5
3.0
18
75
0.60
±20
1.1
4.5
—
3.5
-55 to 150
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
11.5 (typical)
Weight
g
o
C
A
4.5A
1.5
500V
相關PDF資料 |
PDF描述 |
|---|---|
| JANTXV2N6764 | HEXFET Power MOSFET(HEXFET 功率MOS場效應管) |
| JANTX2N6764 | HEXFET Power MOSFET(HEXFET 功率MOS場效應管) |
| JANTXV2N6766 | HEXFET Power MOSFET(HEXFET 功率MOS場效應管) |
| JANTX2N6766 | HEXFET Power MOSFET(HEXFET 功率MOS場效應管) |
| JANTXV2N6768 | HEXFET Power MOSFET(HEXFET 功率MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| JANTX2N6764 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3 制造商:International Rectifier 功能描述:100V THRU 500V, UP TO 38A, N-CH, ENHANCEMENT MODE MOSFET PWR - Bulk |
| JANTX2N6764T1 | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH TO-254AA |
| JANTX2N6766 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE 制造商:International Rectifier 功能描述:100V THRU 500V, UP TO 38A, N-CH, ENHANCEMENT MODE MOSFET PWR - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET (NFET) - Bulk 制造商:Microsemi 功能描述:Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE |
| JANTX2N6766T1 | 制造商:Microsemi Corporation 功能描述:2N6766T1JANTX - Bulk |
| JANTX2N6768 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3 制造商:International Rectifier 功能描述:100V THRU 500V, UP TO 38A, N-CH, ENHANCEMENT MODE MOSFET PWR - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET, TO-204AA, LAW - Bulk 制造商:International Rectifier 功能描述:Single N-Channel 400 V 150 W 110 nC Hexfet Transistor Through Hole - TO-3 |
發布緊急采購，3分鐘左右您將得到回復。