欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: K4E171611D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x 16Bit CMOS Dynamic RAM with Extended Data Out
中文描述: 100萬× 16的CMOS動態隨機存儲器的擴展數據輸出
文件頁數: 1/35頁
文件大小: 553K
代理商: K4E171611D
K4E171611D, K4E151611D
K4E171612D, K4E151612D
CMOS DRAM
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of
memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K
Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features
of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-
refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung
s advanced CMOS pro-
cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer,
personal computer and portable machines.
Part Identification
- K4E171611D-J(T) (5V, 4K Ref.)
- K4E151611D-J(T) (5V, 1K Ref.)
- K4E171612D-J(T) (3.3V, 4K Ref.)
- K4E151612D-J(T) (3.3V, 1K Ref.)
Extended Data Out Mode operation
(Fast Page Mode with Extended Data Out)
2 CAS Byte/Word Read/Write operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Self-refresh capability (L-ver only)
TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in plastic SOJ 400mil and TSOP(II) packages
Single +5V
±
10% power supply (5V product)
Single +3.3V
±
0.3V power supply (3.3V product)
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Column Decoder
Lower
Data out
Buffer
RAS
UCAS
LCAS
W
Vcc
Vss
DQ0
to
DQ7
A0-A11
(A0 - A9)
*1
A0 - A7
(A0 - A9)
*1
Memory Array
1,048,576 x16
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Refresh Cycles
Part
NO.
V
CC
Refresh
cycle
Refresh period
Nor-
L-ver
K4E171611D
K4E171612D
K4E151611D
K4E151612D
5V
3.3V
5V
3.3V
4K
64ms
128ms
1K
16ms
Performance Range
Speed
-45
-50
-60
t
RAC
45ns
50ns
60ns
t
CAC
13ns
15ns
17ns
t
RC
69ns
84ns
104ns
t
HPC
16ns
20ns
25ns
Remark
5V/3.3V
5V/3.3V
5V/3.3V
Active Power Dissipation
Speed
3.3V
5V
4K
360
324
288
1K
540
504
468
4K
550
495
440
1K
825
770
715
-45
-50
-60
Unit : mW
S
Upper
Data in
Buffer
Upper
Data out
Buffer
Lower
Data in
Buffer
DQ
8
to
DQ15
OE
Note)
*1
: 1K Refresh
相關PDF資料
PDF描述
K4E171612D Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 22uF; Voltage: 100V; Case Size: 10x12.5 mm; Packaging: Bulk
K4E160411D Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 220uF; Voltage: 35V; Case Size: 10x16 mm; Packaging: Bulk
K4E160412D 4M x 4Bit CMOS Dynamic RAM with Extended Data Out
K4E170411D 4M x 4Bit CMOS Dynamic RAM with Extended Data Out
K4E170412D 4M x 4Bit CMOS Dynamic RAM with Extended Data Out
相關代理商/技術參數
參數描述
K4E171612D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit CMOS Dynamic RAM with Extended Data Out
K4E-1KOHM 制造商:Panasonic Electric Works 功能描述:
K4E-24V-1 制造商:M.E.C. Relays 功能描述: 制造商:Master Electronic Controls (MEC) 功能描述: 制造商:Panasonic Electric Works 功能描述:
K4E-24V-6 制造商:Panasonic Electric Works 功能描述:
K4E-24V-9 制造商:M.E.C. Relays 功能描述:
主站蜘蛛池模板: 祁门县| 汤原县| 诸暨市| 宁乡县| 大庆市| 开化县| 文昌市| 丰城市| 三都| 深水埗区| 盐边县| 卢氏县| 怀仁县| 吉隆县| 湖口县| 贡山| 宿迁市| 璧山县| 松原市| 黄梅县| 郎溪县| 江门市| 潮州市| 手游| 南昌市| 惠水县| 泸水县| 大同县| 庆安县| 方正县| 香格里拉县| 肇东市| 南投县| 通州区| 水城县| 巫山县| 松溪县| 大洼县| 安西县| 崇仁县| 法库县|