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參數資料
型號: K6R1004V1C-C15
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
中文描述: 256Kx4位(與OE)的高速CMOS靜態RAM(3.3V的)。
文件頁數: 1/9頁
文件大小: 137K
代理商: K6R1004V1C-C15
PRELIMINARY
PRELIMINARY
CMOS SRAM
Revision 2.0
April 2000
- 1 -
CCPCCCRPreliminary
K6R1004V1C-C/C-L, K6R1004V1C-I/C-P
Document Title
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Remark
Preliminary
Final
Final
History
Initial release with Preliminary.
Release to Final Data Sheet.
1.1. Delete Preliminary.
1.2. Relax DC characteristics.
Item
I
CC
Add 10ns & Low Power Ver.
Previous
65mA
63mA
60mA
Changed
70mA
68mA
65mA
12ns
15ns
20ns
Draft Data
Aug. 5th. 1998
Sep. 7th. 1998
Apr. 24. 2000
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PDF描述
K6R1004V1C-C20 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
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K6R1004V1C-I10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
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相關代理商/技術參數
參數描述
K6R1004V1C-C20 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1C-I 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1C-I10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1C-I12 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004V1C-I15 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
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