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參數(shù)資料
| 型號： | K6X4016T3F-TQ70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 256Kx16位低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 138K |
| 代理商： | K6X4016T3F-TQ70 |
K6X4016T3F Family
CMOS SRAM
Revision 1.0
August 2003
1
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No
0.0
0.1
1.0
Remark
Preliminary
Preliminary
Final
History
Initial draft
Revised
- Added Commercial product
- Deleted
44-TSOP2-400R Package Type.
- Added 55ns product(@ 3.0V~3.6V)
Finalized
Revised
- Changed I
CC
(Operating power supply current) from 4mA to 2mA
- Changed I
CC
1(Average operating current) from 4mA to 3mA
- Changed I
CC
2(Average operating current) from 40mA to 25mA
- Changed I
SB
1(Standby Current(CMOS), Commercial)
from 15
μ
A to 10
μ
A
- Changed I
SB
1(Standby Current(CMOS), Industrial)
from 20
μ
A to 10
μ
A
- Changed I
SB
1(Standby Current(CMOS), Automotive)
from 30
μ
A to 20
μ
A
- Changed I
DR
(Data retention current, Commercial)
from 15
μ
A to 10
μ
A
- Changed I
DR
(Data retention current, Industrial)
from 20
μ
A to 10
μ
A
- Changed I
DR
(Data retention current, Automotive)
from 30
μ
A to 20
μ
A
Draft Date
July 29, 2002
December 2, 2002
August 8, 2003
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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