- 您現在的位置：買賣IC網 > PDF目錄374300 > K9K4G08Q0M (SAMSUNG SEMICONDUCTOR CO. LTD.) 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory PDF資料下載
參數資料
| 型號： | K9K4G08Q0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
| 中文描述： | 512M × 8位/ 256M × 16位NAND閃存 |
| 文件頁數： | 1/38頁 |
| 文件大小： | 601K |
| 代理商： | K9K4G08Q0M |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁
FLASH MEMORY
1
K9K4G08U0M
K9K4G16Q0M
K9K4G16U0M
K9K4G08Q0M
Document Title
512M x 8 Bit / 256M x 16 Bit
NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.0
0.1
0.2
0.3
0.4
0.5
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
History
1. Initial issue
1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package
1. The 3rd Byte ID after 90h ID read command is don’t cared.
The 5th Byte ID after 90h ID read command is deleted.
1. The K9W8G16U1M-YCB0,YIB0,PCB0,PIB0 is deleted in line up.
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
3. Pb-free Package is added.
K9K4G08Q0M-PCB0,PIB0
K9K4G08U0M-PCB0,PIB0
K9K4G16U0M-PCB0,PIB0
K9K4G16Q0M-PCB0,PIB0
K9W8G08U1M-PCB0,PIB0
1. Added Addressing method for program operation.
1. The tADL(Address to Data Loading Time) is added.
- tADL Minimum 100ns
-
tADL is the time from the WE rising edge of final address cycle
to the WE rising edge of first data cycle at program operation.
2. Added addressing method for program operation
3. PKG(TSOP1) Dimension Change
Draft Date
Feb. 19. 2003
Mar. 31. 2003
Apr. 9. 2003
Apr. 30. 2003
Jan. 27. 2004
May.31. 2004
相關PDF資料 |
PDF描述 |
|---|---|
| K9K4G08U0M | 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
| K9K4G16Q0M | 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
| K9K4G16U0M | 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
| K9W8G08U1M | 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
| K9K8G08U0M | 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| K9K4G08U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
| K9K4G08U0M-PIB0T00 | 制造商:Samsung Semiconductor 功能描述: |
| K9K4G08U1M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory |
| K9K4G16Q0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
| K9K4G16U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
發布緊急采購，3分鐘左右您將得到回復。