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參數(shù)資料
| 型號(hào)： | KD60GB80 |
| 廠商： | Sanrex Corporation |
| 英文描述： | DIODE MODULE |
| 中文描述： | 二極管模塊 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 106K |
| 代理商： | KD60GB80 |
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DD(KD)60GB40/80
DIODE MODULE
Symbol
Item
Ratings
DD60GB40
400
480
Unit
V
RRM
V
RSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
DD60GB80
800
960
V
V
93.5MAX
80
2
3
1
2
16.5
23
3
~
+
–
2
1
23
3M5
2- 6.5
Unit
a
Electrical Characteristics
Symbol
I
RRM
Repetitive Peak Reverse Current, max.
V
FM
Forward Voltage Drop, max.
Rth j-c
Thermal Impedance, max.
Item
Conditions
at V
DRM
, single phase, half wave. Tj
Foward current 180A Tj 25
J unction to case
150
Ratings
20
1.25
0.50
Unit
mA
V
/
W
Inst. measurement
Symbol
I
F AV
I
F (RMS)
I
FSM
I
2
t
Tj
Tstg
V
ISO
Item
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
I
2
t
J unction Temperature
Storage Temperature
Isolation Voltage
Conditions
Ratings
Unit
A
A
A
A
2
S
Single phase, half wave, 180 conduction, Tc
Single phase, half wave, 180 conduction, Tc
12
cycle, 50
/
60H
Z
, peak value, non-repetitive
Value for one cycle of surge current
114
114
60
95
1100
/
1200
6000
40 to
40 to
2500
4.7
2.7
170
150
125
Mounting
Torque
A.C.1minute
Recommended Value 2.5-3.9
Recommended Value 1.5-2.5
V
Mounting
M6
Terminal M5
Mass
25-40
15-25
48
28
N m
f
B
g
Power Diode Module
DD60GB
series are designed for various rectifier circuits.
DD60GB
has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V
is avaiable for various input voltage.
Isolated mounting base
Two elements in a package for simple (single and three phase) bridge
connections
Highly reliable glass passivated chips
High surge current capability
Applications
Various rectifiers, Battery chargers, DC motor drives
UL;E76102 M
Maximum Ratings
Tj
25
unless otherwise specified
SanRex
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