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參數(shù)資料
| 型號： | KM23V8000D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M-Bit (1Mx8) CMOS Mask ROM(8M位 (1Mx8) CMOS掩膜ROM) |
| 中文描述： | 800萬位（1Mx8）的CMOS掩模ROM（800萬位（1Mx8）的CMOS掩膜光盤） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 34K |
| 代理商： | KM23V8000D |
KM23V8000D(G)
CMOS MASK ROM
PRELIMINARY
Pin Name
A
0
- A
19
Q
0
- Q
7
CE
OE
V
CC
V
SS
N.C
Pin Function
Address Inputs
Data Outputs
Chip Enable
Output Enable
Power
Ground
No Connection
8M-Bit (1Mx8) CMOS MASK ROM
The KM23V8000D(G) is a fully static mask programmable ROM
organized 1,048,576 x 8 bit. It is fabricated using silicon gate
CMOS process technology.
This device operates with 2.7V to 3.6V power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23V8000D is packaged in a 32-DIP and the
KM23V8000DG in a 32-SOP.
GENERAL DESCRIPTION
FEATURES
ü
1,048,576 x 8 bit organization
ü
Fast access time
3.3V Operation : 100ns(max.)
3.0V Operation : 120ns(max.)
ü
Supply voltage : 2.7V to 3.6V
ü
Current consumption
Operating : 30/25mA(max.)
Standby : 30
§
(max.)
ü
Fully static operation
ü
All inputs and outputs TTL compatible
ü
Three state outputs
ü
Package
-. KM23V8000D : 32-DIP-600
-. KM23V8000DG : 32-SOP-525
A
19
X
AND
DECODER
BUFFERS
A
0
Y
AND
DECODER
BUFFERS
MEMORY CELL
MATRIX
(1,048,576x8)
SENSE AMP.
CONTROL
LOGIC
BUFFERS
CE
OE
.
.
.
.
.
.
.
.
Q
0
Q
7
. . .
PIN CONFIGURATION
N.C
A
16
A
15
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
CE
OE
Q
0
Q
1
Q
4
Q
5
Q
6
Q
7
A
9
Q
10
A
11
DIP
&
SOP
KM23V8000D(G)
FUNCTIONAL BLOCK DIAGRAM
1
2
3
4
5
6
7
8
32
31
9
10
30
29
11
12
28
27
13
14
26
25
15
16
24
23
21
21
20
19
18
17
Q
2
V
SS
V
CC
A
18
A
17
A
14
A
13
A
8
Q
3
A
0
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相關(guān)代理商/技術(shù)參數(shù) |
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| KM23V8105D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM |
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