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參數資料
| 型號： | KM29N32000IT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器) |
| 中文描述： | 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲器） |
| 文件頁數： | 1/26頁 |
| 文件大小： | 316K |
| 代理商： | KM29N32000IT |
KM29N32000T, KM29N32000IT
FLASH MEMORY
1
Document Title
4M x 8 bit NAND Flash Memory
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you ha ve
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
1.0
1.1
Remark
Final
History
Data Sheet, 1997
Data Sheet, 1998
1. Changed t
BERS
parameter : 5ms(Typ.)
→
2ms(Typ.)
2. Removed reverse type package.
3. The 1st block(00h block address) is guaranteed to be a good block.
4. Changed AC parameters.
t
WH
: 10ns(Min.)
→
15ns(Min).
t
REH
: 10ns(Min)
→
15ns(Min).
Data Sheet, 1998
Draft Date
April 10th 1997
April 10th 1998
July 14th 1998
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