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參數資料
| 型號： | KM29U128T |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit NAND Flash Memory |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁數： | 1/26頁 |
| 文件大小： | 481K |
| 代理商： | KM29U128T |
KM29U128T, KM29U128IT
FLASH MEMORY
1
Document Title
16M x 8 Bit NAND Flash Memory
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
1.0
1.1
Remark
Preliminary
Final
Final
History
Initial issue.
1) Changed t
PROG
Parameter : 1ms(Max.)
→
500
μ
s(Max.)
2) Changed t
BERS
Parameter : 4ms(Max.)
→
3ms(Max.)
3) Changed Input and Output Timing Level 0.8V and 2.0V
→
1.5V
1) Changed t
R
Parameter : 7
μ
s(Max.)
→
10
μ
s(Max.)
2) Changed Nop : 10 cycles(Max.)
→
Main Array 2 cycles(Max.)
Spare Array 3 cycles(Max.)
3) Added CE don’ care mode during the data-loading and reading
Draft Date
April 10th 1998
July 14th 1998
April 10th 1999
相關PDF資料 |
PDF描述 |
|---|---|
| KM29U64000IT | 8M x 8 Bit NAND Flash Memory |
| KM29U64000T | 8M x 8 Bit NAND Flash Memory |
| KM29U64000K1 | 8M x 8 Bit NAND Flash Memory(8M x 8位 NAND閃速存儲器) |
| KM29V040IT | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲器) |
| KM29V040T | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲器) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KM29U64000IT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| KM29U64000T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| KM29V16000AIT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V16000AR | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAND FLASH MEMORY |
| KM29V16000ARS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAN FLASH MEMORY |
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