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參數(shù)資料
型號(hào)： KM416RD4C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Direct Rambus DRAM(Direct Rambus 動(dòng)態(tài)RAM)
中文描述： 直接Rambus公司的DRAM（動(dòng)態(tài)內(nèi)存直接Rambus公司）
文件頁(yè)數(shù)： 1/59頁(yè)
文件大小： 4654K
代理商： KM416RD4C
Page 2
KM416RD4C/KM418RD4C
Direct RDRAM
Revision 0.7 September 1998
TARGET
Overview
The Direct Rambus
DRAM (Direct RDRAM ) is a
general purpose high-performance memory device suitable
for use in a broad range of applications including computer
memory, graphics, video, and any other application where
high bandwidth and low latency are required.
The 64/72-Mbit Direct Rambus DRAMs (RDRAM
) are
extremely high-speed CMOS DRAMs organized as 4M
words by 16 or 18 bits. The use of Rambus Signaling Level
(RSL) technology permits 600Mbps or 800Mbps transfer
rates while using conventional system and board design
technologies. Direct RDRAM devices are capable of
sustained data transfers at 1.25 ns per two bytes (10ns per
sixteen bytes).
The architecture of the Direct RDRAMs allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and
data buses with independent row and column control yield
over 95% bus efficiency. The Direct RDRAM's sixteen
banks support up to four simultaneous transactions.
System oriented features for mobile, graphics and large
memory systems include power management, byte masking,
and x18 organization. The two data bits in the x18 organiza-
tion are general and can be used for additional storage and
bandwidth or for error correction.
Features
n
Highest sustained bandwidth per DRAM device
- 1.6GB/s sustained data transfer rate
- Separate control and data buses for maximized
efficiency
- Separate row and column control buses for
easy scheduling and highest performance
- 16 banks: four transactions can take place simul-
taneously at full bandwidth data rates
n
Low latency features
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions
n
Advanced power management:
- Multiple low power states allows flexibility in
power consumption versus time to transition to
active state
- Power-down self-refresh
n
Organization: 1Kbyte pages and 16 banks, x 16/18
- x18 organization allows ECC configurations or
increased storage/bandwidth
- x16 organization for low cost applications
n
Uses Rambus Signaling Level (RSL) for up to 800MHz
operation
The 64/72-Mbit Direct RDRAMs are offered in a CSP hori-
zontal package suitable for desktop as well as low-profile
add-in card and mobile applications.
Direct RDRAMs operate from a 2.5 volt supply.
Key Timing Parameters/Part Numbers
Figure 1. Direct RDRAM CSP Package
Organization
a
a.The
"
1
6d
"
designation indicates that this RDRAM core is composed
of 16 banks which use a
"
d
oubled
"
bank architecture.
I/O Freq.
(Mbps)
t
RAC
(ns)
Part
Number
256Kx16x16d
600
53.3
KM416RD4C-G60
256Kx16x16d
800
45
KM416RD4C-K80
256Kx16x16d
800
40
KM416RD4C-M80
256Kx18x16d
600
53.3
KM418RD4C-G60
256Kx18x16d
800
45
KM418RD4C-K80
256Kx18x16d
800
40
KM418RD4C-M80
相關(guān)PDF資料
PDF描述
KM416S1021CT-G7 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1021CT-G8 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1021CT-GS 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
KM416S1120D 512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM(4M x 16位 x4組同步動(dòng)態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416RD4D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD8AC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD8AC(D)-RK70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD8AC(D)-RK80 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD8AC(DB)-RCG60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
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