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參數資料
| 型號： | KM62U256CLG-10L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| 中文描述： | 32Kx8位低功耗和低成本嚇的CMOS靜態RAM |
| 文件頁數： | 1/12頁 |
| 文件大小： | 90K |
| 代理商： | KM62U256CLG-10L |
ELECTRONICS
KM62V256C, KM62U256C Family
CMOS SRAM
Revision 04
April 1996
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1
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FEATURE SUMMARY
GENERAL DESCRIPTION
The KM62V256C and KM62U256C family are fabricated
by SAMSUNG's advanced CMOS process technology. The
family can support various operating temperature ranges
and has various package types for user flexibility of system
design. The family also support low data retention voltage
for battery back-up operation with low data retention
current.
PRODUCT FAMILY
KM62V256CL-L
KM62U256CL-L
KM62V256CLE-L
KM62U256CLE-L
KM62V256CLI-L
KM62U256CLI-L
Commercial
(0~70 °C)
Extended
(-25~85 °C)
Industrial
(-40~85 °C)
28-SOP**
28-TSOP(I) R/F
28-SOP**
28-TSOP(I) R/F
28-SOP**
28-TSOP(I) R/F
Power Dissipation
10 μA
10 μA
20 μA
15 μA
20 μA
15 μA
Operating
(Icc2)
PKG Type
Speed
(ns)
Operating
Temp.
Product
List
Process Technology : 0.7μm CMOS
Organization : 32K x 8
Power Supply Voltage
KM62V256C family : 3.3V ± 0.3V
KM62U256C family : 3.0V ± 0.3V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : JEDEC Standard
28-SOP, 28-TSOP(I)-Forward/Reverse
32Kx8 bit Low Power & Low Vcc CMOS Static RAM
PIN DESCRIPTION
A10
/CS
IO8
IO7
IO6
IO5
IO4
Vss
IO3
IO2
IO1
A0
A1
A2
28
27
26
25
24
23
22
21
20
19
18
17
16
15
/OE
A11
A9
A8
A13
/WE
Vcc
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Vcc
/WE
A13
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
28
27
26
25
24
23
22
21
20
19
18
17
16
15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
A3
A4
A5
A6
A7
A12
A14
Vcc
/WE
A13
A8
A9
A11
/OE
14
13
12
11
10
9
8
7
6
5
4
3
2
1
A2
A1
A0
IO1
IO2
IO3
Vss
IO4
IO5
IO6
IO7
IO8
/CS
A10
28-Pin SOP
28-Pin TSOP
Type I - Forward
28-Pin TSOP
Type I - Reverse
* measured with 30pF test load
** the device with 100ns SOP package in 3.0~3.6V Vcc range is not produced.
FUNCTIONAL BLOCK DIAGRAM
35mA
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Standby
(Isb1, Max)
Vcc Range
3.0~3.6V
2.7~3.3V
3.0~3.6V
2.7~3.3V
3.0~3.6V
2.7~3.3V
70*/100
85*/100
70*/100
85*/100
70*/100
85*/100
I/O1~8
Function
Address Inputs
Write Enable Input
Chip Select Input
Output Enable Input
Data Input/Output
Power
Ground
Y-Decoder
X
C
I/O Buffer
Cell Array
A3~A8
A12~14
Pin Name
A0~A14
/WE
/CS
/OE
I/O1~I/O8
Vcc
Vss
/CS, /WE
/OE
A0~2, A9~11
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| KM62U256CLG-8L | 32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| KM62U256C | 32K x 8 Bit Low Power CMOS Static RAM(32K x 8位低功耗CMOS 靜態RAM) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| KM62U256CLG-8L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| KM62U256CLRG-10L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| KM62U256CLRG-8L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| KM62U256CLTG-10L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
| KM62U256CLTG-8L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32Kx8 bit Low Power AND Low Vcc CMOS Static RAM |
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