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參數(shù)資料
| 型號(hào)： | KMB8D2N60QA |
| 廠商： | KEC Holdings |
| 英文描述： | N-Ch Trench MOSFET |
| 中文描述： | N溝道溝道MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 478K |
| 代理商： | KMB8D2N60QA |
2007. 9. 3
1/4
SEMICONDUCTOR
TECHNICAL DATA
KMB8D2N60QA
N-Ch Trench MOSFET
Revision No : 1
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for portable for portable equipment and SMPS.
FEATURES
V
DSS
=60V, I
D
=8.2A.
Drain-Source ON Resistance.
R
DS(ON)
=22m
R
DS(ON)
=27m
Super High Dense Cell Design
(Max.) @ V
GS
=10V
(Max.) @ V
GS
=4.5V
MOSFET Maximum Ratings (Ta=25
Unless otherwise noted)
B2
G
H
B1
1
4
5
8
A
P
D
L
T
FLP-8
0.20+0.1/-0.05
T
P
1.27
MILLIMETERS
4.85 0.2
3.94 0.2
6.02 0.3
0.4 0.1
0.15+0.1/-0.05
1.63 0.2
0.65 0.2
DIM
A
B1
B2
D
G
H
L
Note : *Surface Mounted on 1
1 FR4 Board
1
2
3
4
8
7
6
5
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
KMB8D2N
60QA
PIN CONNECTION (TOP VIEW)
CHARACTERISTIC
SYMBOL PATING
UNIT
Drain Source Voltage
V
DSS
60
V
Gate Source Voltage
V
GSS
25
V
Drain Current
DC@T
A
=25
I
D
*
8.2
A
DC@T
A
=70
6.6
A
Pulsed
I
DP
40
A
Drain Source Diode Forward Current
I
S
3.0
A
Drain Power Dissipation
T
A
=25
P
D
*
3.0
W
T
A
=70
2.0
W
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~150
Thermal Resistance, Junction to Ambient
R
thJA
*
41
/W
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