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參數資料
| 型號： | KMM5328100CKG |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | IND 4922-31L API DELEVAN T/R 1 |
| 中文描述： | 8米× 32的DRAM上海藥物研究所利用4Mx4，4K/2K刷新，5V的 |
| 文件頁數： | 1/15頁 |
| 文件大小： | 271K |
| 代理商： | KMM5328100CKG |
DRAM MODULE
KMM5328100CK/CKG
KMM5328000CK/CKG
KMM5328000CK/CKG & KMM5328100CK/CKG with Fast Page Mode
8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
The Samsung KMM53280(1)00CK is a 8Mx32bits Dynamic
RAM
high
density
memory
KMM53280(1)00CK consists of sixteen CMOS 4Mx4bits
DRAMs in 24-pin SOJ package mounted on a 72-pin glass-
epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is
mounted on the printed circuit board for each DRAM. The
KMM53280(1)00CK is a Single In-line Memory Module with
edge connections and is intended for mounting into 72 pin
edge connector sockets.
PERFORMANCE RANGE
module.
The
Samsung
Part Identification
- KMM5328000CK(4096 cycles/64ms Ref, SOJ, Solder)
- KMM5328000CKG(4096 cycles/64ms Ref, SOJ, Gold)
- KMM5328100CK(2048 cycles/32ms Ref, SOJ, Solder)
- KMM5328100CKG(2048 cycles/32ms Ref, SOJ, Gold)
Fast Page Mode Operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
TTL compatible inputs and outputs
Single +5V
±
10% power supply
JEDEC standard PDPin & pinout
PCB : Height(1000mil), double sided component
GENERAL DESCRIPTION
FEATURES
Speed
t
RAC
t
CAC
t
RC
-5
50ns
13ns
90ns
-6
60ns
15ns
110ns
PIN NAMES
Pin Name
Function
A0 - A11
Address Inputs(4K Ref)
A0 - A10
Address Inputs(2K Ref)
DQ0 - DQ31
Data In/Out
W
Read/Write Enable
RAS0, RAS1
Row Address Strobe
CAS0 - CAS3
Column Address Strobe
PD1 -PD4
Presence Detect
Vcc
Power(+5V)
Vss
Ground
NC
No Connection
PRESENCE DETECT PINS (Optional)
* Pin connection changing available
Pin
50NS
60NS
PD1
PD2
PD3
PD4
NC
Vss
Vss
Vss
NC
Vss
NC
NC
PIN CONFIGURATIONS
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Symbol
V
SS
DQ0
DQ16
DQ1
DQ17
DQ2
DQ18
DQ3
DQ19
Vcc
NC
A0
A1
A2
A3
A4
A5
A6
A10
DQ4
DQ20
DQ5
DQ21
DQ6
DQ22
DQ7
DQ23
A7
A11
Vcc
A8
A9
RAS1
RAS0
NC
NC
Pin
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Symbol
NC
NC
Vss
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1
NC
W
NC
DQ8
DQ24
DQ9
DQ25
DQ10
DQ26
DQ11
DQ27
DQ12
DQ28
Vcc
DQ29
DQ13
DQ30
DQ14
DQ31
DQ15
NC
PD1
PD2
PD3
PD4
NC
Vss
* NOTE : A11 is used for only KMM5328000CK/CKG (4K ref.)
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
相關PDF資料 |
PDF描述 |
|---|---|
| KMM5328000CKG | 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V |
| KMM5328004BSWG | 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| KMM5328004CSWG | 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| KMM5328004CSW | 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V |
| KMM5361203C2W | 1M x 36 DRAM SIMM(1M x 36 動態 RAM模塊) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KMM5361203C2W | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh |
| KMM5361203C2WG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh |
| KMM5361205C2W | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
| KMM5361205C2WG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
| KMM53616000BK | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V |
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