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參數(shù)資料
| 型號： | KSC5042F |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage Switchihg Dynamic Focus Application |
| 中文描述： | 0.1 A, 900 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 56K |
| 代理商： | KSC5042F |
2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
K
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Saturation Voltage
C
ob
Output Capacitance
Parameter
Value
1500
900
5
100
300
6
150
- 55 ~ 150
Units
V
V
V
mA
mA
W
°
C
°
C
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 900V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
I
C
= 20mA, I
B
= 4mA
I
C
= 20mA, I
B
= 4mA
V
CB
= 100V, f = 1MHz
Min.
1500
900
5
Typ.
Max.
Units
V
V
V
μ
A
μ
A
10
10
30
5
2
V
V
pF
2.8
KSC5042F
High Voltage Switchihg Dynamic Focus
Application
High Collector-Emitter Breakdown Voltage : BV
CEO
=900V
Small C
ob
=2.8pF (Typ.)
Wide S.O.A
High reliability
1
1.Base 2.Collector 3.Emitter
TO-220F
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KSC5042FTU | 功能描述:兩極晶體管 - BJT NPN Triple Diffused Planar Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5042FTU | 制造商:Fairchild Semiconductor Corporation 功能描述:ROHS COMPLIANT:NO |
| KSC5042FYDTU | 功能描述:兩極晶體管 - BJT NPN Si Transistor Tripple Diff Planar RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSC5042M | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage Switchihg Dynamic Focus Application |
| KSC5042MSTSSTU | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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