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參數(shù)資料
| 型號(hào)： | KSC5061RJ69Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 35K |
| 代理商： | KSC5061RJ69Z |
KSC5061 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING: t
F
= 0.1
μ
s
WIDE SOA
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(T
C
=25
°
C)
h
FE
(1) CLASSIFICATION
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
C
T
J
T
STG
Rating
800
500
7
5
10
2
50
150
-55 ~ 150
Unit
V
V
V
A
A
A
W
°
C
°
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25
°
C)
Junction Temperature
Storage Temperature
Characteristic
Symbol
BV
CBO
BV
CEO
BV
EBO
V
CEX
(s)
Test Conditions
I
C
= 1mA, I
E
= 0
I
C
= 5mA, R
BE
=
∞
I
E
= 1mA, I
C
= 0
I
C
= 2.5A, I
B
1 = -I
B
2 =1A
L = 1mH, Clamped
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.6A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CB
= 10V, f=1MHz
V
CE
=10V, I
C
=0.6A
V
CC
= 200V
5
I
B
1 = -2.5
I
B
2 = I
C
= 4A
R
L
= 50
Min
800
500
7
500
Typ
Max
Unit
V
V
V
V
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Collector Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
I
CBO
I
EBO
h
FE
1
h
FE
2
V
CE
(sat)
V
BE
(sat)
C
OB
f
T
t
ON
t
STG
t
F
15
8
80
18
10
10
50
1
1.5
0.5
3
0.3
μ
A
μ
A
V
V
pF
MHz
μ
s
μ
s
μ
s
Classification
R
O
Y
h
FE
1
15 ~ 30
20 ~ 40
30 ~ 50
1.Base 2.Collector 3.Emitter
TO-220
1999 Fairchild Semiconductor Corporation
Rev. B
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