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參數資料
| 型號： | KSE2955 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | General Purpose and Switching Applications |
| 中文描述： | 通用和交換應用 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 38K |
| 代理商： | KSE2955 |
2000 Fairchild Semiconductor International
Rev. A1, December 2000
K
PNP Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (T
a
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
BV
CEO
Collector- Emitter Breakdown Voltage
I
CEO
Collector Cut-off Current
I
CEX1
Collector Cut-off Current
I
CEX2
Collector Cut-off Current
* Pulse test: PW
≤
300
μ
s, duty cycle
≤
2% Pulse
Parameter
Value
- 70
- 60
- 5
- 10
- 6
75
0.6
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°
C
°
C
Test Condition
Min.
-60
Max.
Units
V
μ
A
mA
mA
I
C
= - 200mA, I
B
= 0
V
CE
= - 30V, I
B
= 0
V
CE
= - 70V, V
BE
(off) = 1.5V
V
CE
= - 70V, V
BE
(off) = 1.5V
@ T
C
= 150
°
C
V
EB
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 4A
V
CE
= - 4V, I
C
= - 10A
I
C
= - 4A, I
B
= - 0.4A
I
C
= - 10A, I
B
= - 3.3A
V
CE
= - 4V, I
C
= - 4A
V
CE
= - 10V, I
C
= - 500mA
-700
-1
-5
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
-5
100
mA
20
5
V
CE
(sat)
-1.1
-8
-1.8
V
V
V
V
BE
(on)
f
T
* Base-Emitter On Voltage
Current Gain Bandwidth Product
2
MHz
KSE2955T
General Purpose and Switching Applications
DC Current Gain Specified to I
C
= 10 A
High Current Gain Bandwidth Product : f
T
= 2MHz (Min.)
1.Base 2.Collector 3.Emitter
1
TO-220
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相關代理商/技術參數 |
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| KSE2955T | 功能描述:兩極晶體管 - BJT PNP Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSE2955TTU | 功能描述:兩極晶體管 - BJT PNP Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSE3055T | 功能描述:兩極晶體管 - BJT NPN Sil Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSE3055TTU | 功能描述:兩極晶體管 - BJT NPN Sil Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSE340 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage General Purpose Applications |
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