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參數資料
| 型號： | KSE5020 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Feature |
| 中文描述： | 3 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | KSE5020 |
2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
K
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current (DC)
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
V
CEX
(sus)
Collector-Emitter Sustaining Voltage
h
FE
Classification
Classification
Parameter
Value
800
500
7
3
6
1
30
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°
C
°
C
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, R
BE
=
∞
I
E
= 1mA, I
C
= 0
I
C
= 1.5A, I
B
1=-I
B
2= 0.6A
L = 2mH, Clamped
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.3A
V
CE
= 5V, I
C
= 1.5A
I
C
= 1.5A, I
B
= 0.3A
I
C
= 1.5A, I
B
= 0.3A
V
CB
= 10V, f = 1MHz
V
CE
= 10V, I
C
= 0.3A
V
CC
= 200V
5I
B
1 = -2.5I
B
2=I
C
=2A
RL = 100
Min.
800
500
7
500
Typ.
Max.
Units
V
V
V
V
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
S
t
F
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
10
10
50
μ
A
μ
A
15
8
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
1
1.5
V
V
pF
MHz
μ
s
μ
s
μ
s
50
18
0.5
3
0.3
R
O
Y
h
FE1
15 ~ 30
20 ~ 40
30 ~ 50
KSE5020
Feature
High Voltage, High Quality High Speed Switching : t
F
=0.1
μ
s
WIDE SOA
1
1. Emitter 2.Collector 3.Base
TO-126
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PDF描述 |
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| KSE8355T | General Purpose and Switching Applications |
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| KSH112-I | D-PAK for Surface Mount Applications |
| KSH117 | D-PAK for Surface Mount Applications |
| KSH117-I | D-PAK for Surface Mount Applications |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KSE5020AS | 功能描述:兩極晶體管 - BJT NPN Si Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSE5020S | 功能描述:兩極晶體管 - BJT NPN Sil Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSE5740 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage Power Switching In Inductive Circuits |
| KSE5740TU | 功能描述:達林頓晶體管 NPN Si Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| KSE5741 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage Power Switching In Inductive Circuits |
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