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參數資料
| 型號： | KSH3055-I |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications |
| 中文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | IPAK-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 50K |
| 代理商： | KSH3055-I |
2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
K
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
Collector Dissipation (T
a
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
I
CEO
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
*DC Current Gain
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Parameter
Value
70
60
5
10
6
20
1.75
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°
C
°
C
Test Condition
I
C
= 30mA, I
B
= 0
V
CE
= 30V, I
E
= 0
V
CB
= 70V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 4V, I
C
= 4A
V
CE
= 4V, I
C
= 10A
I
C
= 4A, I
B
= 0.4A
I
C
= 10A, I
B
= 3.3A
V
CE
= 4V, I
C
= 4A
V
CE
= 10V, I
C
= 500mA
Min.
60
Max.
Units
V
μ
A
mA
mA
50
2
0.5
100
20
5
V
CE
(sat)
* Collector-Emitter Saturation Voltage
1.1
8
1.8
V
V
V
V
BE
(on)
f
T
* Base-Emitter On Voltage
Current Gain Bandwidth Product
2
MHz
KSH3055
General Purpose Amplifier
Low Speed Switching Applications
D-PAK for Surface Mount Applications
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ -I “ Suffix)
Electrically Similar to Popular KSE3055T
DC Current Gain Specified to 10A
High Current Gain - Bandwidth Product:
f
T
= 2MHz (MIN), I
C
= 500mA
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| KSH3055ITU | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSH3055TF | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSH3055TM | 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| KSH30C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications |
| KSH30CITU | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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