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參數(shù)資料
型號(hào): KTA1296
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)
中文描述: 外延平面PNP晶體管(功率放大器,功率開(kāi)關(guān))
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 72K
代理商: KTA1296
2000. 11. 30
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1296
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
FEATURES
Low Saturation Voltage.
: V
CE(sat)
=-0.5V(Max.) at I
C
=-2A
Complementary to KTC3266.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
A
B
C
D
E
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
0.45 MAX
1.00
F
G
H
J
K
L
M
N
D
1 2
3
B
A
J
K
G
H
F
F
L
C
E
C
M
N
1. EMITTER
2. COLLECTOR
3. BASE
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-20
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-2
A
Base Current
I
B
-0.5
A
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-20V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-6V, I
C
=0
-
-
-0.1
A
DC Current Gain
h
FE
(1) (Note)
V
CE
=-2V, I
C
=-0.1A
120
-
400
h
FE
(2)
V
CE
=-2V, I
C
=-2A
40
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-2A, I
B
=-0.1A
-
-
-0.5
V
Base-Emitter Voltage
V
BE
V
CE
=-2V, I
C
=-0.1A
-
-
-0.85
V
Transition Frequency
f
T
V
CE
=-2V, I
C
=-0.5A
-
120
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
40
-
pF
Note : h
FE
(1) Classification Y:120
240, GR:200
400
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相關(guān)代理商/技術(shù)參數(shù)
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