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參數資料
| 型號： | KTC945B |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING) |
| 中文描述： | 外延平面NPN晶體管（通用，開關） |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 76K |
| 代理商： | KTC945B |
2001. 9. 14
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC945B
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity.
: h
FE
(I
C
=0.1mA)/h
FE
(I
C
=2mA)=0.95(Typ.)
Low Noise : NF=1dB(Typ.). at f=1kHz
Complementary to KTA733B(O, Y, GR class).
MAXIMUM RATING (Ta=25
)
TO-92
DIM
A
B
C
D
E
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
0.45 MAX
1.00
F
G
H
J
K
L
M
N
D
1 2
3
B
A
J
K
G
H
F
F
L
C
E
C
M
N
1. EMITTER
2. BASE
3. COLLECTOR
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=100
A, I
E
=0
60
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
50
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=100
A, I
C
=0
5
-
-
V
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=2mA
70
-
700
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=10mA
-
0.1
0.25
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=100mA, I
B
=10mA
-
-
1.0
V
Transition Frequency
f
T
V
CE
=10V, I
C
=10mA
-
300
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
2.0
3.5
pF
Noise Figure
NF
V
CE
=6V, I
C
=0.1mA Rg=10k
, f=1kHz
-
1.0
10
dB
Note : h
FE
Classification O:70~140, Y:120~240, GR:200~400, BL:350~700
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