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參數資料
| 型號： | KTX301U |
| 廠商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING) |
| 中文描述： | 平面PNP晶體管外延硅外延平面型二極管（通用，超高速開關） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 69K |
| 代理商： | KTX301U |
2002. 1. 24
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTX301U
EPITAXIAL PLANAR PNP TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
Revision No : 3
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM
A
A1
MILLIMETERS
2.00 0.20
1.3+
B
D
G
H
T
USV
1.25+
0.65
2.1+
0.2+0.10/-0.05
0-0.1
+
0.9 0.1
0.15+0.1/-0.05
B1
C
G
1
3
2
B
B1
D
A
H
T
5
4
C
C
A
+
1. D ANODE
2. Q EMITTER
3. Q BASE
4. Q COLLECTOR
5. D CATHODE
MAXIMUM RATINGS (Ta=25
)
TRANSISTOR Q
1
EQUIVALENT CIRCUIT (TOP VIEW)
1
D1
Q1
2
3
5
4
MARK SPEC
CA
Type Name
4
1
2
3
5
Marking
Type
KTX301U
KTX301U
Q
1
h
FE
Rank : Y
Q
1
h
FE
Rank : GR
Mark
CA
CB
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
Collector Current
I
C
-150
Emitter Current
I
B
-30
Collector Power Dissipation
P
C
100
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~150
DIODE D
1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
85
V
Reverse Voltage
V
R
80
V
Maximum (Peak) Forward Current
I
FM
300
Average Forward Current
I
O
100
Surge Current (10mS)
I
FSM
2
A
Power Dissipation
P
D
-
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
相關PDF資料 |
PDF描述 |
|---|---|
| KTX301 | EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING) |
| KTX301E | EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING) |
| KTX302U | EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, LOW VOLTAGE HIGH SPEED SWITCHING) |
| KTX303U | EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (SWITCHING, LOW VOLTAGE HIGH SPEED SWITCHING) |
| KTX311T | EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| KTX302U | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, LOW VOLTAGE HIGH SPEED SWITCHING) |
| KTX303U | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (SWITCHING, LOW VOLTAGE HIGH SPEED SWITCHING) |
| KTX311T | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE |
| KTX321U | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR |
| KTX401E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING) |
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