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參數(shù)資料
型號(hào): KTX311T
廠商: KEC Holdings
英文描述: EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
中文描述: 平面PNP晶體管外延硅外延平面型二極管
文件頁數(shù): 1/4頁
文件大小: 56K
代理商: KTX311T
2002. 8. 13
1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX311T
EPITAXIAL PLANAR PNP TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
Revision No : 2
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in TSV.
(Thin Super Mini type with 5 pin)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM
A
MILLIMETERS
2.9 0.2
+
B
D
E
TSV
1.6+0.2/-0.1
+
+
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9+
0.95
+
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K
L
0.60
0.55
A
F
G
G
D
B
E
C
L
H
J
J
I
2
3
1
5
4
1. D ANODE
2. Q EMITTER
3. Q BASE
4. Q COLLECTOR
5. D CATHODE
MAXIMUM RATINGS (Ta=25
TRANSISTOR Q
1
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V
RRM
V
R
I
O
I
FSM
T
j
25
V
Reverse Voltage
20
V
Average Forward Current
1.0
A
Non-Repetitive Peak Surge current
3
Junction Temperature
125
Storage Temperature
T
stg
-55~125
EQUIVALENT CIRCUIT (TOP VIEW)
1
D1
Q1
2
3
5
4
MARK SPEC
* Package mounted on a ceramic board (600
0.8
)
h Rank
Type Name
Marking
Lot No.
C
1
2
3
5
4
Type
KTX311T
KTX311T
Q
1
h
FE
Rank : Y
Q
1
h
FE
Rank : GR
Mark
CB
CC
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
*
T
j
-30
V
Collector-Emitter Voltage
-20
V
Emitter-Base Voltage
-5
V
Collector Current
-1
A
Emitter Current
1
A
Collector Power Dissipation
0.9
Junction Temperature
150
Storage Temperature Range
T
stg
-55~150
DIODE D
1
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