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參數資料
| 型號： | LA7383 |
| 元件分類： | 消費家電 |
| 英文描述： | SPECIALTY CONSUMER CIRCUIT, PDIP36 |
| 封裝： | SDIP-36 |
| 文件頁數： | 8/13頁 |
| 文件大小： | 184K |
| 代理商： | LA7383 |
Continued from preceding page.
Parameter
Symbol
Conditions
min
typ
max
Unit
Detail enhancer characteristics
(1)
GENH1
VIN = 158 mVp-p 2 MHz sine wave
Measure ratio of levels of T4 and T3, difference
with GEMP
1.6
1.9
2.6
dB
Detail enhancer characteristics
(2)
GENH2
VIN = 50 mVp-p 2 MHz sine wave
Measure ratio of levels of T4 and T3, difference
with GEMP
3.1
4.1
5.1
dB
Detail enhancer characteristics
(3)
GENH3
VIN = 15.8 mVp-p 2 MHz sin wave
Measure ratio of levels of T4 and T3, difference
with GEMP
5.3
6.3
7.3
dB
Detail enhancer characteristics
(4)
GENH4
VIN = 15.8 mVp-p 2 MHz sine wave
Measure output amplitude at T4 in edit mode,
difference with GEMP
2.9
3.9
4.9
dB
Nonlinear emphasis
characteristics (1)
GNLEMP1
VIN = 500 mVp-p 2 MHz
Measure ratio of levels of T4 and T3, difference
with GEMP
0.5
1.4
2.3
dB
Nonlinear emphasis
characteristics (2)
GNLEMP2
VIN = 158 mVp-p 2 MHz
Measure ratio of levels of T4 and T3, difference
with GEMP
2.6
3.8
5.2
dB
Nonlinear emphasis
characteristics (3)
GNLEMP3
VIN = 50 mVp-p 2 MHz
Measure ratio of levels of T3 and T4, difference
with GEMP
4.9
6.4
7.9
dB
Main linear emphasis
characteristics (1)
GME1
VIN = 50 mVp-p 500 kHz sine wave
Measure ratio of levels of T4 and T3, difference
with GEMP
4.9
5.2
5.5
dB
Main linear emphasis
characteristics (2)
GME2
VIN = 50 mVp-p 2 MHz
Measure ratio of levels of T4 and T3, difference
with GEMP
13.1
13.6
14.1
dB
Detail enhancer US mode
characteristics (1)
GENHS1
Measure the amplitude at T4 when
VIN = 15.8 mVp-p 2 MHz sine wave; compare
level with GEMP
2.9
3.9
4.9
dB
Detail enhancer US mode
characteristics (2)
GENHS2
Measure the amplitude at T4 when
VIN = 15.8 mVp-p 2 MHz sine wave in edit mode;
compare level with GEMP
0.7
1.7
2.7
dB
White clipping level
LWC
VIN = 500 mVp-p white 100% video
Measure white clipping level at T4
186
193
200
%
Dark clipping level
LDC
VIN = 500 mVp-p white 100% video
Measure dark clipping level at T4
–50
–45
–40
%
[PB Mode Y]
Current consumption PB
IccP
Incoming currents at pins 29 and 24 when
VCC = 5.0 V
125
155
185
mA
Dropout compensation period
TDOC
T33A: 4 MHz, 300 mVp-p sine wave
T3A: 0.5 Vp-p video signal
T33A: time from when input went to 0 until T28A
output returned
0.6
1.0
ms
FM demodulation voltage
VDEM4
VIN = 300 mVp-p,f=4 MHz, output voltage
0.9
1.05
1.15
V
FM demodulation sensitivity
SDEM
VIN = 300 mVp-p,f=2 MHz, VDEM2
VIN = 300 mVp-p,f=6 MHz, VDEM6
Calculate SDEM =(VDEM2 –VDEM6)/4
0.11
0.14
0.17
V/MHz
FM demodulation linearity
LDEM
LDEM =
V
DEM4 –(VDEM2 +V DEM6)/2
VDEM2 –VDEM6
x 100
–3.5
0
+3.5
%
Carrier leakage
CL
VIN = 300 mVp-p,f=4MHz
Ratio between 4 MHz component of T1 and
SDEM
–40
–35
dB
Noncorrelation detection level
VCORR
VIN = 500 mVp-p video signal (ramp waveform)
22
IRE
PB YNR characteristics LP/EP
(1)
GP-YNR1
VIN = 500 mVp-p noise test signal –30 dB
S/N difference with S6 on/off
2.5
dB
PB YNR characteristics LP/EP
(2)
GP-YNR2
VIN = 500 mVp-p noise test signal –30 dB
S/N difference with EDIT on/off; pin 36 low
1.5
dB
Continued on next page.
LA7383
No.4032-4/13
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