- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383278 > LET20015 (意法半導(dǎo)體) RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PDF資料下載
參數(shù)資料
| 型號： | LET20015 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| 中文描述： | 射頻功率晶體管的LDMOS增強(qiáng)技術(shù)在塑料包裝 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 67K |
| 代理商： | LET20015 |
1/5
TARGET DATA
February, 27 2003
LET20015
RF POWER TRANSISTORS
L
dmos
E
nhanced
T
echnology in Plastic Package
Designed for GSM / EDGE / IS-97 applications
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 15 W with 11 dB gain @ 2000 MHz
ESD PROTECTION
IS-97 CDMA PERFORMANCES
P
OUT
=
2.5 W
EFF. = 20 %
DESCRIPTION
The LET20015 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 2 GHz. LET20015 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. LET20015’s
superior linearity performance makes it an ideal
solution for base station applications.
The PowerSO-10 plastic package, designed to offer
high reliability, is the first ST JEDEC approved, high
power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
LET90015
BRANDING
LET90015
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
Parameter
Value
Unit
65
V
-0.5 to +15
V
2
A
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Max. Operating Junction Temperature
TBD
W
Tj
165
°
C
T
STG
Storage Temperature
-65 to +175
°
C
THERMAL DATA
(T
CASE
= 70
°
C)
R
th(j-c)
Junction -Case Thermal Resistance
TBD
°
C/W
Mounting recommendations are available in
www.st.com/rf/
(look for application note AN1294)
PIN CONNECTION
GATE
SOURCE
DRAIN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LET20030C | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LET20030S | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET21004 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET21008 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET21030C | RF POWER TRANSISTORS Ldmos Enhanced Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LET20030C | 功能描述:射頻MOSFET電源晶體管 RF PWR Trans Ldmost Family RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET20030S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET20045C | 功能描述:射頻MOSFET電源晶體管 RF PWR trans Ldmost 2.0 GHz N-Ch ENH RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET21004 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET21008 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。