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參數(shù)資料
| 型號(hào)： | LIS2L06AL |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 模擬信號(hào)調(diào)理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, PBGA8 |
| 封裝： | 5 X 5 MM, 1.60 MM HEIGHT, PLASTIC, LGA-8 |
| 文件頁數(shù)： | 15/17頁 |
| 文件大小： | 202K |
| 代理商： | LIS2L06AL |
LIS2L06AL
Mechanical and electrical specifications
7/17
2.3
Absolute maximum ratings
Stresses above those listed as “absolute maximum ratings” may cause permanent damage
to the device. This is a stress rating only and functional operation of the device under these
conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
2.4
Terminology
Sensitivity describes the gain of the sensor and can be determined by applying 1g
acceleration to it. As the sensor can measure DC accelerations this can be done easily by
pointing the axis of interest towards the center of the earth, note the output value, rotate the
sensor by 180 degrees (point to the sky) and note the output value again thus applying ±1g
acceleration to the sensor. Subtracting the larger output value from the smaller one and
dividing the result by 2 will give the actual sensitivity of the sensor. This value changes very
little over temperature (see sensitivity change vs. temperature) and also very little over time.
The Sensitivity Tolerance describes the range of Sensitivities of a large population of
sensors.
Zero-g level describes the actual output signal if there is no acceleration present. A sensor
in a steady state on a horizontal surface will measure 0g in X axis and 0g in Y axis. The
output is ideally for a 3.3V powered sensor Vdd/2 = 1650mV. A deviation from ideal 0-g level
(1650mV in this case) is called Zero-g offset. Offset of precise MEMS sensors is to some
extend a result of stress to the sensor and therefore the offset can slightly change after
mounting the sensor onto a printed circuit board or exposing it to extensive mechanical
stress. Offset changes little over temperature - see “Zero-g level change vs. temperature” -
the Zero-g level of an individual sensor is very stable over lifetime. The Zero-g level
tolerance describes the range of Zero-g levels of a population of sensors.
Table 4.
Absolute maximum ratings
Symbol
Ratings
Maximum Value
Unit
Vdd
Supply voltage
-0.3 to 7
V
Vin
Input Voltage on Any Control pin (ST, FS)
-0.3 to Vdd +0.3
V
APOW
Acceleration (Any axis, Powered, Vdd=3.3V)
3000g for 0.5 ms
10000g for 0.1 ms
AUNP
Acceleration (Any axis, Not powered)
3000g for 0.5 ms
10000g for 0.1 ms
TSTG
Storage Temperature Range
-40 to +125
°C
ESD
Electrostatic Discharge Protection
2kV HBM
200V MM
1500V CDM
This is a Mechanical Shock sensitive device, improper handling can cause permanent
damages to the part
This is an ESD sensitive device, improper handling can cause permanent damages to
the part
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| LIS2L06AL_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:MEMS INERTIAL SENSOR:2-axis - +/- 2g/6g ultracompact linear accelerometer |
| LIS2L06ALTR | 功能描述:加速計(jì) - 板上安裝 MEMS INERTIAL snsr 2 axis RoHS:否 制造商:Murata 傳感軸:Double 加速:12 g 靈敏度: 封裝 / 箱體: 輸出類型:Analog 數(shù)字輸出 - 位數(shù):11 bit 電源電壓-最大:5.25 V 電源電壓-最小:4.75 V 電源電流:4 mA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C |
| LIS2MDLTR | 功能描述:ULTRA-COMPACT HIGH-PERFORMANCE E 制造商:stmicroelectronics 系列:- 零件狀態(tài):在售 類型:羅盤/磁力計(jì) 技術(shù):磁阻 軸:X，Y，Z 輸出類型:I2C，SPI 電壓 - 電源:1.71 V ~ 3.6 V 分辨率:16 b 帶寬:5Hz ~ 50Hz 工作溫度:-40°C ~ 85°C（TA） 特性:可選數(shù)值范圍 封裝/外殼:12-VFLGA 供應(yīng)商器件封裝:12-LGA（2x2） 標(biāo)準(zhǔn)包裝:1 |
| LIS302ALB | 功能描述:加速計(jì) - 板上安裝 MEMS motion snsr 3 axis RoHS:否 制造商:Murata 傳感軸:Double 加速:12 g 靈敏度: 封裝 / 箱體: 輸出類型:Analog 數(shù)字輸出 - 位數(shù):11 bit 電源電壓-最大:5.25 V 電源電壓-最小:4.75 V 電源電流:4 mA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C |
| LIS302ALBTR | 功能描述:加速計(jì) - 板上安裝 MEMS Motion Sensor RoHS:否 制造商:Murata 傳感軸:Double 加速:12 g 靈敏度: 封裝 / 箱體: 輸出類型:Analog 數(shù)字輸出 - 位數(shù):11 bit 電源電壓-最大:5.25 V 電源電壓-最小:4.75 V 電源電流:4 mA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C |
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