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參數(shù)資料
| 型號： | LMBD914LT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | High-Speed Switching DIODE |
| 中文描述： | 高速開關(guān)二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 63K |
| 代理商： | LMBD914LT1G |
Symbol
Value
Unit
Reverse Voltage
V
R
100
Vdc
Forward Current
I
F
200
mAdc
Peak Forward Surge Current
I
FM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR–5 Board (Note 1.)
T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
JA
556
°
C/W
Total Device Dissipation
Alumina Substrate (Note 2.)
T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
JA
417
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
–55 to
+150
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
R
= 100 Adc)
V
(BR)
100
–
Vdc
Reverse Voltage Leakage Current
(V
R
= 20 Vdc)
(V
R
= 75 Vdc)
I
R
–
–
25
5.0
nAdc
Adc
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
T
–
4.0
pF
Forward Voltage
(I
F
= 10 mAdc)
V
F
–
1.0
Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc) (Figure 1)
t
rr
–
4.0
ns
1. FR–5 = 1.0
2. Alumina = 0.4
0.75
0.062 in.
0.024 in. 99.5% alumina.
0.3
MARKING DIAGRAM
5D
5D = Device Code
Rating
MAXIMUM RATINGS
1
3
LESHAN RADIO COMPANY, LTD.
2
SOT-23
LMBD914LT1
LMBD914LT1
-
1/3
HighSpeed Switching
Diode
Features
PbFree Package May be Available. The GSuffix Denotes a
PbFree Lead Finish
Device
Package
Shipping
ORDERING INFORMATION
LMBD914LT1G
SOT23
(PbFree)
3000/Tape & Reel
LMBD914LT1
SOT23
3000/Tape & Reel
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