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參數(shù)資料
| 型號(hào)： | LMH6559MAX |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | High-Speed, Closed-Loop Buffer |
| 中文描述： | BUFFER AMPLIFIER, PDSO8 |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 2/22頁 |
| 文件大?。?/td> | 1078K |
| 代理商： | LMH6559MAX |
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 1)
ESD Tolerance
Human Body Model
Machine Model
Output Short Circuit Duration
Supply Voltage (V
+
– V
)
Voltage at Input/Output Pins
Soldering Information
Infrared or Convection (20 sec.)
±
5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J
= 25C, V
+
= +5V, V
= 5V, V
O
= V
CM
= 0V and R
L
= 100
to 0V.
Boldface
limits apply at the temperature extremes.
2000V (Note 2)
200V (Note 3)
(Note 4), (Note 5)
13V
V
+
+0.8V, V
0.8V
235C
Wave Soldering (10 sec.)
Storage Temperature Range
Junction Temperature
260C
65C to +150C
+150C
Operating Ratings
(Note 1)
Supply Voltage (V
+
- V
)
Operating Temperature
Range (Note 6), (Note 7)
Package Thermal Resistance (Note 6), (Note 7)
8-Pin SOIC
5-Pin SOT23
3 - 10V
40C to +85C
172C/W
235C/W
Symbol
Frequency Domain Response
SSBW
Small Signal Bandwidth
GFN
Gain Flatness
<
0.1dB
FPBW
Full Power Bandwidth (3dB)
DG
Differential Gain
Parameter
Conditions
Min
(Note 9)
Typ
(Note 8)
Max
(Note 9)
Units
V
O
<
0.5V
PP
V
O
<
0.5V
PP
V
O
= 2V
PP
(+10dBm)
R
L
= 150
to 0V;
f = 3.58 MHz
R
L
= 150
to 0V;
f = 3.58 MHz
1750
200
1050
0.06
MHz
MHz
MHZ
%
DP
Differential Phase
0.02
deg
Time Domain Response
t
r
Rise Time
t
f
Fall Time
t
s
Settling Time to
±
0.1%
OS
Overshoot
SR
Slew Rate
Distortion And Noise Performance
HD2
2
nd
Harmonic Distortion
HD3
3
rd
Harmonic Distortion
THD
Total Harmonic Distortion
e
n
Input-Referred Voltage Noise
CP
1dB Compression point
SNR
Signal to Noise Ratio
Static, DC Performance
A
CL
Small Signal Voltage Gain
3.3V Step (20-80%)
0.4
0.5
9
4
4580
ns
ns
ns
%
V/μs
3.3V Step
1V Step
(Note 11)
V
O
= 2V
PP
; f = 20MHz
V
O
= 2V
PP
; f = 20MHz
V
O
= 2V
PP
; f = 20MHz
f = 1MHz
f = 10MHz
f = 5MHz; V
O
= 1V
PP
58
53
52
2.8
+23
120
dBc
dBc
dBc
nV/
dBm
dB
V
O
= 100mV
PP
R
L
= 100
to 0V
V
O
= 100mV
PP
R
L
= 2k
to 0V
.97
.996
V/V
.99
.998
V
OS
Input Offset Voltage
3
20
25
mV
TC V
OS
Temperature Coefficient Input
Offset Voltage
Input Bias Current
(Note 12)
23
μV/C
I
B
(Note 10)
10
14
3
μA
TC I
B
Temperature Coefficient Input
Bias Current
(Note 12)
3.6
nA/C
L
www.national.com
2
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