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參數資料
| 型號： | LPC662AIN |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 運算放大器 |
| 英文描述： | Low Power CMOS Dual Operational Amplifier |
| 中文描述： | DUAL OP-AMP, 3300 uV OFFSET-MAX, 0.35 MHz BAND WIDTH, PDIP8 |
| 封裝： | PLASTIC, DIP-8 |
| 文件頁數： | 1/16頁 |
| 文件大?。?/td> | 585K |
| 代理商： | LPC662AIN |
LPC662
Low Power CMOS Dual Operational Amplifier
General Description
The LPC662 CMOS Dual operational amplifier is ideal for
operation from a single supply. It features a wide range of
operating voltage from +5V to +15V, rail-to-rail output swing
in addition to an input common-mode range that includes
ground. Performance limitations that have plagued CMOS
amplifiers in the past are not a problem with this design. In-
put V
, drift, and broadband noise as well as voltage gain
(into 100 k
and 5 k
) are all equal to or better than widely
accepted bipolar equivalents, while the power supply re-
quirement is typically less than 0.5 mW.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational
amplifier and LPC661 for a single CMOS operational ampli-
fier with these same features.
Applications
n
High-impedance buffer
n
Precision current-to-voltage converter
n
Long-term integrator
n
High-impedance preamplifier
n
Active filter
n
Sample-and-Hold circuit
n
Peak detector
Features
n
Rail-to-rail output swing
n
Micropower operation (
<
0.5 mW)
n
Specified for 100 k
and 5 k
loads
n
High voltage gain
n
Low input offset voltage
n
Low offset voltage drift
n
Ultra low input bias current
n
Input common-mode includes GND
n
Operating range from +5V to +15V
n
Low distortion
n
Slew rate
n
Full military temperature range available
120 dB
3 mV
1.3 μV/C
2 fA
0.01% at 1 kHz
0.11 V/μs
Connection Diagram
Ordering Information
Package
Temperature Range
Military
LPC662AMD
NSC
Drawing
Transport
Media
Industrial
8-Pin
D08C
Rail
Side Brazed
Ceramic DIP
8-Pin
Small Outline
8-Pin
Molded DIP
8-Pin
Ceramic DIP
LPC662AIM
or LPC662IM
LPC662AIN
or LPC662IN
M08A
Rail
Tape and Reel
Rail
N08E
LPC662AMJ/883
J08A
Rail
8-Pin DIP/SO
DS010548-1
Top View
March 1998
L
1999 National Semiconductor Corporation
DS010548
www.national.com
相關PDF資料 |
PDF描述 |
|---|---|
| LPC662AMD | Low Power CMOS Dual Operational Amplifier |
| LPC662IM | Low Power CMOS Dual Operational Amplifier |
| LPC662IN | Low Power CMOS Dual Operational Amplifier |
| LQA28A | 3V, 1W Boosted Boomer |
| LV8572A | LV8572A Low Voltage Real Time Clock (RTC) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| LPC662AMD | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Low Power CMOS Dual Operational Amplifier |
| LPC662AMJ/883 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Low Power CMOS Dual Operational Amplifier |
| LPC662IM | 制造商:Texas Instruments 功能描述:OP Amp Dual GP R-R O/P 15.5V 8-Pin SOIC N Rail 制造商:Texas Instruments 功能描述:OP AMP, DUAL CMOS, SMD, SOIC8, 662 制造商:Texas Instruments 功能描述:OP AMP, DUAL CMOS, SMD, SOIC8, 662; Op Amp Type:Low Input Bias; No. of Amplifiers:2; Slew Rate:0.11V/s; Supply Voltage Range:5V to 15V; Amplifier Case Style:SOIC; No. of Pins:8; Bandwidth:350kHz; Operating Temperature Min:-40C; ;RoHS Compliant: Yes |
| LPC662IM | 制造商:Texas Instruments 功能描述:OP AMP DUAL CMOS SMD SOIC8 662 |
| LPC662IM/NOPB | 功能描述:運算放大器 - 運放 RoHS:否 制造商:STMicroelectronics 通道數量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉換速度:0.89 V/us 關閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
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