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參數資料
| 型號： | LPC662AIN |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 運算放大器 |
| 英文描述： | Low Power CMOS Dual Operational Amplifier |
| 中文描述： | DUAL OP-AMP, 3300 uV OFFSET-MAX, 0.35 MHz BAND WIDTH, PDIP8 |
| 封裝： | PLASTIC, DIP-8 |
| 文件頁數： | 2/16頁 |
| 文件大?。?/td> | 585K |
| 代理商： | LPC662AIN |
Absolute Maximum Ratings
(Note 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Differential Input Voltage
Supply Voltage (V
+
V
)
Output Short Circuit to V
+
Output Short Circuit to V
Lead Temperature
(Soldering, 10 sec.)
Storage Temp. Range
Junction Temperature
ESD Rating
(C = 100 pF, R = 1.5 k
)
Power Dissipation
Current at Input Pin
Current at Output Pin
±
Supply Voltage
16V
(Note 11)
(Note 1)
260C
65C to +150C
150C
1000V
(Note 2)
±
5 mA
±
18 mA
Current at Power Supply Pin
Voltage at Input/Output Pin
35 mA
(V
+
) + 0.3V, (V
) 0.3V
Operating Ratings
(Note 3)
Temperature Range
LPC662AMJ/883
LPC662AM
LPC662AI
LPC662I
Supply Range
Power Dissipation
Thermal Resistance (
θ
JA
) (Note 10)
8-Pin Ceramic DIP
8-Pin Molded DIP
8-Pin SO
8-Pin Side Brazed Ceramic DIP
55C
≤
T
J
≤
+125C
55C
≤
T
J
≤
+125C
40C
≤
T
J
≤
+85C
40C
≤
T
J
≤
+85C
4.75V to 15.5V
(Note 9)
100C/W
101C/W
165C/W
100C/W
DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
= 25C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5V and R
L
1M unless otherwise specified.
LPC662AM
LPC662AMJ/883
Limit
(Notes 4, 8)
3
3.5
LPC662AI
Limit
(Note 4)
LPC662I
Limit
(Note 4)
Parameter
Conditions
Typ
Units
Input Offset Voltage
1
3
6
mV
max
μV/C
3.3
6.3
Input Offset Voltage
Average Drift
Input Bias Current
1.3
0.002
20
100
20
100
pA
max
pA
max
Tera
dB
min
dB
min
dB
min
V
max
V
min
V/mV
min
V/mV
min
V/mV
min
V/mV
min
4
4
Input Offset Current
0.001
2
2
Input Resistance
Common Mode
Rejection Ratio
Positive Power Supply
Rejection Ratio
Negative Power Supply
Rejection Ratio
Input Common-Mode
Voltage Range
>
1
83
0V
≤
V
CM
≤
12.0V
V
+
= 15V
5V
≤
V
+
≤
15V
V
O
= 2.5V
0V
≤
V
≤
10V
70
68
70
68
84
82
0.1
0
V
+
2.3
V
+
2.6
400
250
180
70
200
150
100
35
70
68
70
68
84
83
0.1
0
V
+
2.3
V
+
2.5
400
300
180
120
200
160
100
60
63
61
63
61
74
73
0.1
0
V
+
2.3
V
+
2.5
300
200
90
70
100
80
50
40
83
94
V
+
= 5V and 15V
For CMRR
≥
50 dB
0.4
V
+
1.9
Large Signal
Voltage Gain
R
L
= 100 k
(Note 5)
Sourcing
Sinking
1000
500
R
L
= 5 k
(Note 5)
Sourcing
Sinking
1000
250
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| LPC662AMD | Low Power CMOS Dual Operational Amplifier |
| LPC662IM | Low Power CMOS Dual Operational Amplifier |
| LPC662IN | Low Power CMOS Dual Operational Amplifier |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| LPC662AMD | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Low Power CMOS Dual Operational Amplifier |
| LPC662AMJ/883 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Low Power CMOS Dual Operational Amplifier |
| LPC662IM | 制造商:Texas Instruments 功能描述:OP Amp Dual GP R-R O/P 15.5V 8-Pin SOIC N Rail 制造商:Texas Instruments 功能描述:OP AMP, DUAL CMOS, SMD, SOIC8, 662 制造商:Texas Instruments 功能描述:OP AMP, DUAL CMOS, SMD, SOIC8, 662; Op Amp Type:Low Input Bias; No. of Amplifiers:2; Slew Rate:0.11V/s; Supply Voltage Range:5V to 15V; Amplifier Case Style:SOIC; No. of Pins:8; Bandwidth:350kHz; Operating Temperature Min:-40C; ;RoHS Compliant: Yes |
| LPC662IM | 制造商:Texas Instruments 功能描述:OP AMP DUAL CMOS SMD SOIC8 662 |
| LPC662IM/NOPB | 功能描述:運算放大器 - 運放 RoHS:否 制造商:STMicroelectronics 通道數量:4 共模抑制比（最小值）:63 dB 輸入補償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 轉換速度:0.89 V/us 關閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
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