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參數(shù)資料
| 型號(hào)： | LPC662IM |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 運(yùn)算放大器 |
| 英文描述： | Low Power CMOS Dual Operational Amplifier |
| 中文描述： | DUAL OP-AMP, 6300 uV OFFSET-MAX, 0.35 MHz BAND WIDTH, PDSO8 |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 4/16頁(yè) |
| 文件大?。?/td> | 585K |
| 代理商： | LPC662IM |
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AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
= 25C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5V and R
L
1M unless otherwise specified.
LPC662AM
LPC662AMJ/883
Limit
(Notes 4, 8)
0.07
0.04
LPC662AI
Limit
(Note 4)
LPC662I
Limit
(Note 4)
Parameter
Conditions
Typ
Units
Slew Rate
(Note 6)
0.11
0.07
0.05
0.05
0.03
V/μs
min
MHz
Deg
dB
dB
Gain-Bandwidth Product
Phase Margin
Gain Margin
Amp-to-Amp Isolation
Input Referred Voltage Noise
0.35
50
17
130
42
(Note 7)
F = 1 kHz
Input Referred Current Noise
F = 1 kHz
0.0002
Total Harmonic Distortion
F = 1 kHz, A
V
= 10, V
+
= 15V
R
L
= 100 k
, V
O
= 8 V
PP
0.01
%
Note 1:
Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature and/or multiple Op Amp shorts
can result in exceeding the maximum allowed junction temperature of 150C. Output currents in excess of
±
30 mA over long term may adversely affect reliability.
Note 2:
The maximum power dissipation is a function of T
J(max)
,
θ
JA
, and T
A
. The maximum allowable power dissipation of any ambient temperature is P
D
=(T
J(max)
T
A
)/
θ
JA
.
Note 3:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is in-
tended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.
Note 4:
Limits are guaranteed by testing or correlation.
Note 5:
V
+
= 15V, V
CM
= 7.5V and R
L
connected to 7.5V. For Sourcing tests, 7.5V
≤
V
O
≤
11.5V. For Sinking tests, 2.5V
≤
V
O
≤
7.5V.
Note 6:
V
+
= 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
Note 7:
Input referred. V
+
= 15V and R
L
= 100 k
connected to V
+
/2. Each amp excited in turn with 1 kHz to produce V
O
= 13 V
PP
.
Note 8:
A military RETS electrical test specification is available on request. At the time of printing, the LPC662AMJ/883 RETS specification complied fully with the
boldface
limits in this column. The LPC662AMJ/883 may also be procured to a Standard Military Drawing specification.
Note 9:
For operating at elevated temperatures the device must be derated based on the thermal resistance
θ
JA
with P
D
= (T
J
T
A
)/
θ
JA
.
Note 10:
All numbers apply for packages soldered directly into a PC board.
Note 11:
Do not connect output to V
+
when V
+
is greater than 13V or reliability may be adversely affected.
www.national.com
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|---|---|
| LPC662IM | 制造商:Texas Instruments 功能描述:OP AMP DUAL CMOS SMD SOIC8 662 |
| LPC662IM/NOPB | 功能描述:運(yùn)算放大器 - 運(yùn)放 RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| LPC662IMX | 功能描述:運(yùn)算放大器 - 運(yùn)放 RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| LPC662IMX/NOPB | 功能描述:運(yùn)算放大器 - 運(yùn)放 RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| LPC662IN | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Low Power CMOS Dual Operational Amplifier |
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