LTC4225-1/LTC4225-2
16
422512f
Next, verify that the thermal ratings of the selected
MOSFET , Si7336ADP , are not exceeded during power-up
or an output short.
Assuming the MOSFET dissipates power due to inrush
current charging the load capacitor, C
L
, at power-up, the
energy dissipated in the MOSFET is the same as the energy
stored in the load capacitor, and is given by:
E
CL
=
1
2
C
L
V
IN
2
For C
L
= 1600礔 , the time it takes to charge up C
L
is
calculated as:
t
CHARGE
=
C
L
V
IN
I
INRUSH
=
1600礔  12V
1A
=19ms
The inrush current is set to 1A by adding capacitance,
C
HG
, at the gate of the Hot Swap MOSFET .
C
HG
=
C
L
I
HGATE(UP)
I
INRUSH
=
1600礔  10礎(chǔ)
1A
=16nF
Choose a practical value of 15nF for C
HG
.
The average power dissipated in the MOSFET is calculated
as:
P
AVG
=
E
CL
t
CHARGE
=
1
2
1600礔   12V
(    )
2
19ms
=6W
The MOSFET selected must be able to tolerate 6W for
19ms during power-up. The SOA curves of the Si7336ADP
provide for 1.5A at 30V (45W) for 100ms. This is suffi-
cient to satisfy the requirement. The increase in junction
temperature due to the power dissipated in the MOSFET
is T = P
AVG
" Zth
JC
where Zth
JC
is the junction-to-case
thermal impedance. Under this condition, the Si7336ADP
data sheet indicates that the junction temperature will
increase by 4.8癈 using Zth
JC
= 0.8癈/W (single pulse).
The duration and magnitude of the power pulse during an
output short is a function of the TMR capacitance, C
T
, and
the LTC4225s active current limit. The short-circuit dura-
tion is given as C
T
" 12[ms/礔] = 0.56ms for C
T
= 0.047礔 .
The maximum short-circuit current is calculated using the
maximum active current limit threshold V
SENSE(ACL)(MAX)
and minimum R
S
value.
I
SHORT(MAX)
=
V
SENSE(ACL)(MAX)
R
S(MIN)
=
75mV
3.96m&
=18.9A
So, the maximum power dissipated in the MOSFET is
18.9A " 12V = 227W for 0.56ms. The Si7336ADP data
sheet indicates that the worst-case increase in junction
temperature during this short-circuit condition is 22.7癈
using Zth
JC
= 0.1癈/W (single pulse). Choosing C
T
=
0.047礔 will not cause the maximum junction temperature
of the MOSFET to be exceeded. The SOA curves of the
Si7336ADP provide for 15A at 30V (450W) for 1ms. This
also satisfies the requirement.
Next, select the resistive divider at the ON1 and ON2 pins
to provide an undervoltage threshold of 9.6V for the 12V
supply. First, choose the bottom resistors, R1 and R3, to be
20k. Then, calculate the top resistor value for R2 and R4:
R
TOP
=
V
IN(UVTH)
V
ON(TH)
1
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
R
BOTTOM
R
TOP
=
9.6V
1.235V
1
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
?/DIV>
20k =135k
Choose the nearest 1% resistor value of 137k for R2
and R4. In addition, there is a 0.1礔 bypass (C1) at the
INTV
CC
pin and a 10nF filter capacitor (C
F
) at the ON pin
to prevent the supply glitches from turning off the Hot
Swap MOSFET .
PCB Layout Considerations
For proper operation of the LTC4225s circuit breaker, Kelvin
connection to the sense resistor is strongly recommended.
The PCB layout should be balanced and symmetrical to
minimize wiring errors. In addition, the PCB layout for the
sense resistor and the power MOSFET should include good
thermal management techniques for optimal device power
dissipation. A recommended PCB layout is illustrated in
Figure 7.
applicaTions inForMaTion
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
LTC4225IGN-2#PBF |
功能描述:IC CONTROLLER HOT SWAP 24-SSOP RoHS:是 類別:集成電路 (IC) >> PMIC - 熱交換 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:119 系列:- 類型:熱交換控制器 應(yīng)用:通用型,PCI Express? 內(nèi)部開關(guān):無 電流限制:- 電源電壓:3.3V,12V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:80-TQFP 供應(yīng)商設(shè)備封裝:80-TQFP(12x12) 包裝:托盤 產(chǎn)品目錄頁(yè)面:1423 (CN2011-ZH PDF) |
LTC4225IGN-2#TRPBF |
功能描述:IC CTLR HOT SWAP DUAL 24-SSOP RoHS:是 類別:集成電路 (IC) >> PMIC - 熱交換 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:119 系列:- 類型:熱交換控制器 應(yīng)用:通用型,PCI Express? 內(nèi)部開關(guān):無 電流限制:- 電源電壓:3.3V,12V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:80-TQFP 供應(yīng)商設(shè)備封裝:80-TQFP(12x12) 包裝:托盤 產(chǎn)品目錄頁(yè)面:1423 (CN2011-ZH PDF) |
LTC4225IUFD-1#PBF |
功能描述:IC CONTROLLER HOT SWAP 24-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - 熱交換 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 類型:熱交換控制器 應(yīng)用:-48V 遠(yuǎn)程電力系統(tǒng),AdvancedTCA ? 系統(tǒng),高可用性 內(nèi)部開關(guān):無 電流限制:可調(diào) 電源電壓:11.5 V ~ 14.5 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:10-TFSOP,10-MSOP(0.118",3.00mm 寬) 供應(yīng)商設(shè)備封裝:10-MSOP 包裝:管件 |
LTC4225IUFD-1#TRPBF |
功能描述:IC CTLR HOT SWAP DUAL 24-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - 熱交換 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:119 系列:- 類型:熱交換控制器 應(yīng)用:通用型,PCI Express? 內(nèi)部開關(guān):無 電流限制:- 電源電壓:3.3V,12V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:80-TQFP 供應(yīng)商設(shè)備封裝:80-TQFP(12x12) 包裝:托盤 產(chǎn)品目錄頁(yè)面:1423 (CN2011-ZH PDF) |
LTC4225IUFD-2#PBF |
功能描述:IC CONTROLLER HOT SWAP 24-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - 熱交換 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program 標(biāo)準(zhǔn)包裝:119 系列:- 類型:熱交換控制器 應(yīng)用:通用型,PCI Express? 內(nèi)部開關(guān):無 電流限制:- 電源電壓:3.3V,12V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:80-TQFP 供應(yīng)商設(shè)備封裝:80-TQFP(12x12) 包裝:托盤 產(chǎn)品目錄頁(yè)面:1423 (CN2011-ZH PDF) |
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