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參數資料
| 型號： | M25P10-VMN6T |
| 廠商： | 意法半導體 |
| 英文描述： | 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface |
| 中文描述： | 1兆位低壓分頁閃存與20 MHz的串行SPI總線接口 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 128K |
| 代理商： | M25P10-VMN6T |
1/7
DATA BRIEF
October 2004
For further information contact your local ST sales office.
M25PXX
512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory
With 40 MHz or 50 MHz SPI Bus Interface
FEATURES SUMMARY
■
512Kbit to 32Mbit of Flash Memory
■
Page Program (up to 256 Bytes) in 1.4ms
(typical)
■
Sector Erase (256 Kbit or 512Kbit)
■
Bulk Erase (512Kbit to 32Mbit)
■
2.7 to 3.6V Single Supply Voltage
■
SPI Bus Compatible Serial Interface
■
40MHz to 50MHz Clock Rate (maximum)
■
Deep Power-down Mode 1
A (typical)
■
Electronic Signatures
–
JEDEC Standard Two-Byte Signature
(20xxh)
–
RES Instruction, One-Byte, Signature, for
backward compatibility
■
More than 100000 Erase/Program Cycles per
Sector
■
More than 20 Year Data Retention
Table 1. Product List
Figure 1. Packages
Reference
Part Number
M25Pxx
M25P32
M25P16
M25P80
M25P40
M25P20
M25P10-A
M25P05-A
VDFPN8 (ME)
8x6mm (MLP8)
SO16 (MF)
300 mil width
SO8 (MN)
150 mil width
8
1
VDFPN8 (MP)
(MLP8)
相關PDF資料 |
PDF描述 |
|---|---|
| M25P16 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VME6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P16-VME6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M58WR064 | 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064EB | 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M25P10-VMW6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface |
| M25P128 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multilevel), Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface |
| M25P128-VME6G | 功能描述:IC FLASH 128MBIT 50MHZ 8VDFPN RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 產品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| M25P128-VME6GB | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 128Mbit 16M x 8bit 8ns 8-Pin VDFPN EP Tray 制造商:Micron Technology Inc 功能描述:FLASH SERL-SPI 3.3V 128MBIT 16MX8 8NS 8PIN VDFPN - Trays 制造商:Micron Technology Inc 功能描述:128MB SPI NOR FLASH 制造商:Micron Technology 功能描述:NOR Flash Serial-SPI 3.3V 128Mbit 16M x 8bit 8ns 8-Pin VDFPN EP Tray |
| M25P128-VME6P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (Multilevel), Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface |
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