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參數資料
| 型號： | M28F010 |
| 廠商： | Intel Corp. |
| 英文描述： | 1024K (128K x 8) CMOS FLASH MEMORY |
| 中文描述： | 1024K（128K的× 8）的CMOS閃存 |
| 文件頁數： | 1/22頁 |
| 文件大小： | 317K |
| 代理商： | M28F010 |
January 1996
Order Number: 271111-005
M28F010
1024K (128K x 8) CMOS FLASH MEMORY
Y
Flash Electrical Chip-Erase
D 5 Second Typical
Y
Quick-Pulse Programming Algorithm
D 10
m
s Typical Byte-Program
D 2 Second Typical Chip-Program
Y
Single High Voltage for Writing and
Erasing
Y
CMOS Low Power Consumption
D 30 mA Maximum Active Current
D 100
m
A Maximum Standby Current
Y
Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
Y
Noise Immunity Features
D
g
10% V
CC
Tolerance
D Maximum Latch-Up Immunity
through EPI Processing
Y
ETOX-III Flash-Memory Technology
D EPROM-Compatible Process Base
D High-Volume Manufacturing
Experience
Y
Compatible with JEDEC-Standard
Byte-Wide EPROM Pinouts
Y
10,000 Program/Erase Cycles Minimum
Y
Available in Three Product Grades:
D QML:
b
55
§
C to
a
125
§
C (T
C
)
D SE2:
b
40
§
C to
a
125
§
C (T
C
)
D SE3:
b
40
§
C to
a
110
§
C (T
C
)
Intel’s M28F010 is a 1024-Kbit byte-wide, in-system re-writable, CMOS nonvolatile flash memory. It is orga-
nized as 131,072 bytes of 8 bits and is available in a 32-pin hermetic CERDIP package. The M28F010 is also
available in 32-contact leadless chip carrier, J-lead, and Flatpack surface mount packages. It offers the most
cost-effective and reliable alternative for updatable nonvolatile memory. The M28F010 adds electrical chip-
erasure and reprogramming to EPROM technology. Memory contents of the M28F010 can be erased and
reprogrammed 1) in a socket; 2) in a PROM programmer socket; 3) on-board during subassembly test; 4) in-
system during final test; and 5) in-system after-sale.
The M28F010 increases memory flexibility while contributing to time- and cost-savings. It is targeted for
alterable code-, data-storage applications where traditional EEPROM functionality (byte erasure) is either not
required or is not cost-effective. Use of the M28F010 is also appropriate where EPROM ultraviolet erasure is
impractical or too time consuming.
271111–1
Figure 1. M28F010 Block Diagram
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