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參數(shù)資料
型號(hào)： M2V64S40BTP-7L
廠商： Mitsubishi Electric Corporation
英文描述： 64M bit Synchronous DRAM
中文描述： 6400位同步DRAM
文件頁(yè)數(shù)： 1/52頁(yè)
文件大?。?/td> 674K
代理商： M2V64S40BTP-7L
Apr. '99
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.1.2)
M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 1048576-WORD x 16-BIT)
64M bit Synchronous DRAM
1
DESCRIPTION
The M2V64S20BTP is organized as 4-bank x 4194304-word x 4-bit, M2V64S30BTP is
organized as 4-bank x 2097152-word x 8-bit, and M2V64S40BTP is organized as 4-bank x
1048576-word x 16-bit Synchronous DRAM with LVTTL interface. All inputs and outputs are
referenced to the rising edge of CLK. The M2V64S20BTP, M2V64S30BTP, M2V64S40BTP
achieve very high speed data rate up to 125MHz, and are suitable for main memory or
graphic memory in computer systems.
FEATURES
- Single 3.3v ± 0.3v power supply
- Clock frequency 125MHz /100MHz
- Fully synchronous operation referenced to clock rising edge
- 4 bank operation controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/Full Page (programmable)
- Burst type- sequential / interleave (programmable)
- Column access - random
- Burst Write / Single Write (programmable)
- Auto precharge / All bank precharge controlled by A10
- Auto refresh and Self refresh
- 4096 refresh cycles /64ms
- Column address A0-A9 (x4), A0-A8(x8), A0-A7(x16)
- LVTTL Interface
- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch
Max.
Frequency
CLK Access
Time
M2V64S20BTP
M2V64S30BTP
M2V64S40BTP
125MHz
6ns
100MHz(CL3)
6ns
-8A
100MHz(CL2)
6ns
-7, -7L
-8, -8L
-10, -10L
100MHz
8ns
相關(guān)PDF資料
PDF描述
M2V64S40BTP-8 64M bit Synchronous DRAM
M2V64S40BTP-8A 64M bit Synchronous DRAM
M2V64S40BTP-8L 64M bit Synchronous DRAM
M2V64S40DTP 64M Synchronous DRAM
M2V64S40DTP-6 64M Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M2V64S40BTP-8 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM
M2V64S40BTP-8A 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM
M2V64S40BTP-8L 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M bit Synchronous DRAM
M2V64S40DTP 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M Synchronous DRAM
M2V64S40DTP-6 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M Synchronous DRAM
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