型號(hào): | M58WR128EB10ZB6T |
廠商: | 意法半導(dǎo)體 |
英文描述: | 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
中文描述: | 128兆位和8Mb × 16,多銀行,突發(fā)1.8V電源快閃記憶體 |
文件頁數(shù): | 1/87頁 |
文件大小: | 1113K |
代理商: | M58WR128EB10ZB6T |
相關(guān)PDF資料 |
PDF描述 |
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M59DR032A120N6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
M59DR032A120ZB1T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
M59DR032A120ZB6T | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
M59DR032AN | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
M59DR032AZB | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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M58WR128EB70ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
M58WR128EB80ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
M58WR128EBZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
M58WR128ET | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
M58WR128ET10ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |